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參數(shù)資料
| 型號(hào)： | MMSF10N02Z |
| 廠商： | Motorola, Inc. |
| 英文描述： | Hook-Up Wire; Conductor Size AWG:24; No. Strands x Strand Size:19 x 36; Jacket Color:Black; Approval Bodies:UL; Approval Categories:UL AWM Style 1213; Passes VW-1 Flame Test; Cable/Wire MIL SPEC:MIL-W-16878/4 Type E RoHS Compliant: Yes |
| 中文描述： | 功率MOSFET單TMOS是20伏10安培 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 184K |
| 代理商： | MMSF10N02Z |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
(Cpk
≥
2.0)
(3)
V(BR)DSS
20
—
—
17
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
12 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS(1)
IDSS
—
—
—
—
10
100
μ
Adc
IGSS
—
0.6
1.5
μ
Adc
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
(Cpk
≥
2.0)
(3)
VGS(th)
0.5
—
0.72
2.86
1.1
—
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 10 Adc)
(VGS = 2.7 Vdc, ID = 5.0 Adc)
(Cpk
≥
2.0)
(3)
RDS(on)
—
—
13
16
15
19
m
Forward Transconductance (VDS = 9.0 Vdc, ID = 5.0 Adc)
gFS
11
14
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
10 Vdc V
Ciss
Coss
Crss
—
1150
1225
pF
Output Capacitance
—
775
810
Transfer Capacitance
—
375
480
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(VDD = 10 Vd
(DD
VGS = 4.0 Vdc, RG = 10
)
5 0 Ad
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
—
65
75
ns
Rise Time
—
360
440
Turn–Off Delay Time
,I
,
—
325
640
Fall Time
—
575
860
Gate Charge
(VDS = 16 Vdc,D
(DS
VGS = 4.0 Vdc)
—
26
32
nC
—
2.5
—
,
—
13
—
—
9.0
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 10 Adc, VGS = 0 Vdc)
(IS = 10 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.83
0.68
1.2
—
Vdc
Reverse Recovery Time
(IS = 10 Adc V
dIS/dt = 100 A/
μ
s)
0 Vdc
trr
—
765
—
ns
ta
tb
—
240
—
—
530
—
Reverse Recovery Storage Charge
QRR
—
8.7
—
μ
C
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values. Cpk =
3 x SIGMA
Max limit – Typ
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMSF10N02ZR2 | 制造商:Motorola Inc 功能描述: 制造商:MOTOROLA 功能描述: |
| MMSF10N03Z | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 10 AMPERES 30 VOLTS |
| MMSF10N03ZR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MMSF1310R2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MMSF2P02E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 2.5 AMPERES 20 VOLTS |
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