參數(shù)資料
型號: MMFT1N10
廠商: Motorola, Inc.
英文描述: MEDIUM POWER TMOS FET 1 AMP 100 VOLTS
中文描述: 中功率的TMOS場效應(yīng)1安培100伏
文件頁數(shù): 6/10頁
文件大?。?/td> 236K
代理商: MMFT1N10
6
Motorola TMOS Power MOSFET Transistor Device Data
Figure 14. Capacitance Variation With Voltage
SAME
DEVICE TYPE
AS DUT
Vin
+18 V
VDD
10 V
100 k
0.1
μ
F
FERRITE
BEAD
DUT
100
2N3904
2N3904
47 k
15 V
100 k
Vin = 15 Vpk; PULSE WIDTH
100
μ
s, DUTY CYCLE
10%.
1 mA
47 k
Figure 15. Gate Charge versus Gate–To–Source Voltage
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)
C
Crss
Ciss
Coss
1400
20
1200
1000
800
600
400
200
0
15
10
5
0
5
10
15
20
VGS
VDS
Figure 16. Gate Charge Test Circuit
Qg, TOTAL GATE CHARGE (nC)
8
0
6
4
2
0
2
4
6
8
V
Ciss
Crss
TJ = 25
°
C
f = 1 MHz
10
TJ = 25
°
C
ID = 1 A
VGS = 10 V
VDS = 50 V
VDS = 80 V
Coss
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