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參數(shù)資料
| 型號(hào)： | MMFT2N25E |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | SPST, 150mA PC Mount Pushbutton |
| 中文描述： | 2000 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 139K |
| 代理商： | MMFT2N25E |
1
Motorola TMOS Power MOSFET Transistor Device Data
N–Channel Enhancement–Mode Silicon Gate
This advanced high voltage TMOS E–FET is designed to
withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain–to–source diode
with fast recovery time. Designed for high voltage, high speed
switching applications such as power supplies, PWM motor
controls and other inductive loads, the avalanche energy capability
is specified to eliminate the guesswork in designs where inductive
loads are switched and offer additional safety margin against
unexpected voltage transients.
Avalanche Energy Capability Specified at Elevated
Temperature
Internal Source–to–Drain Diode Designed to Replace External
Zener Transient Suppressor – Absorbs High Energy in the
Avalanche Mode
Source–to–Drain Diode Recovery Time Comparable to
Discrete Fast Recovery Diode
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
250
Vdc
Drain–to–Gate Voltage, RGS = 1.0 m
Gate–to–Source Voltage — Continuous
250
Vdc
±
20
Vdc
Gate–to–Source Voltage — Single Pulse (tp
≤
50 S)
±
40
Vdc
Drain Current — Continuous @ TC = 25
°
C
Drain Current
— Continuous @ TC = 100
°
C
Drain Current
— Single Pulse (tp
≤
10 S)
2.0
0.6
7.0
Adc
Apk
Total Power Dissipation @ TC = 25
°
C
Derate above 25
°
C
Total PD @ TA = 25
°
C mounted on 1
″
Sq. Drain Pad on FR–4 Bd. Material
Total PD @ TA = 25
°
C mounted on 0.7
″
Sq. Drain Pad on FR–4 Bd. Material
Total PD @ TA = 25
°
C mounted on min. Drain Pad on FR–4 Bd. Material
PD
0.77
6.2
1.0
1.2
0.8
Watts
mW/
°
C
Watts
Operating and Storage Temperature Range
TJ, Tstg
–55 to 150
°
C
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (TJ < 150
°
C)
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 80 V, VGS = 10 V, Peak IL= 4.0 Apk, L = 3.0 mH, RG = 25
)
EAS
26
mJ
THERMAL CHARACTERISTICS
— Junction–to–Ambient on 1
″
Sq. Drain Pad on FR–4 Bd. Material
— Junction–to–Ambient on 0.7
″
Sq. Drain Pad on FR–4 Bd. Material
— Junction–to–Ambient on min. Drain Pad on FR–4 Bd. Material
R
θ
JA
90
103
162
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
TL
260
°
C
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
TMOS is a registered trademark of Motorola, Inc.
E–FET is a trademark of Motorola, Inc.
Order this document
by MMFT2N25E/D
SEMICONDUCTOR TECHNICAL DATA
TMOS POWER FET
2.0 AMPERES
250 VOLTS
RDS(on) = 3.5
CASE 318E–04, STYLE 3
TO–261AA
D
S
G
2,4
3
1
1
2
3
4
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