參數(shù)資料
型號(hào): MMFT1N10
廠商: Motorola, Inc.
英文描述: MEDIUM POWER TMOS FET 1 AMP 100 VOLTS
中文描述: 中功率的TMOS場效應(yīng)1安培100伏
文件頁數(shù): 3/10頁
文件大?。?/td> 236K
代理商: MMFT1N10
3
Motorola TMOS Power MOSFET Transistor Device Data
R
R
R
10
Figure 1. On Region Characteristics
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
TJ = 25
°
C
Figure 2. Gate–Threshold Voltage Variation
With Temperature
TJ, JUNCTION TEMP (
°
C)
Figure 3. Transfer Characteristics
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 4. On–Resistance versus Drain Current
ID, DRAIN CURRENT (AMPS)
Figure 5. On–Resistance versus
Gate–to–Source Voltage
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. On–Resistance versus Junction
Temperature
TJ, JUNCTION TEMPERATURE (
°
C)
VDS = VGS
ID = 1.0 mA
I
8
6
4
2
0
10
8
6
4
2
0
V
(
1.1
–50
1.0
0.9
0.8
0.7
0
50
100
150
4
I
3
2
1
0
10
8
6
4
2
0
0.5
0
0.3
0.2
0.1
0
2
4
0.4
0.5
0.4
0.3
0.1
0
16
12
10
8
6
4
0.5
–50
0.3
0.2
0.1
0
0
50
100
150
0.4
0.2
14
7 V
6 V
VGS = 4 V
5 V
9 V
8 V
VDS = 10 V
100
°
C
TJ = –55
°
C
25
°
C
TJ = 100
°
C
25
°
C
–55
°
C
TJ = 25
°
C
ID = 1 A
VGS = 10 V
ID = 1 A
10 V
VGS = 10 V
1.2
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