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參數(shù)資料
| 型號(hào)： | MMDJ3N03BJT |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | DUAL BIPOLAR POWER TRANSISTOR NPN SILICON 30 VOLTS 3 AMPERES |
| 中文描述： | 3 A, 30 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR, SO-8 |
| 封裝： | SO-8 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 122K |
| 代理商： | MMDJ3N03BJT |
1
Motorola Bipolar Power Transistor Device Data
SO–8 for Surface Mount Applications
Designed for general purpose amplifier and low speed switching applications.
Collector –Emitter Sustaining Voltage — VCEO(sus)
= 30 Vdc (Min) @ IC = 10 mAdc
High DC Current Gain — hFE
= 100 Vdc (Min) @ IC = 1.0 Adc
= 90 Vdc (Min) @ IC = 3.0 Adc
Low Collector –Emitter Saturation Voltage — VCE(sat)
= 0.235 Vdc (Max) @ IC = 1.2 Adc
= 0.5 Vdc (Max) @ IC = 5.0 Adc
Miniature SO–8 Surface Mount Package – Saves Board Space
MARKING:
3N3BJT
ENG
Collector–Emitter Voltage
VCEO
30
Vdc
Emitter–Base Voltage
VEB
±
8.0
Vdc
Collector Current — Continuous
IC
3.0
Adc
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance – Junction to Ambient(1)
Symbol
R
Max
62.5
Unit
C/W
Derate above 25 C
2.0
16
Watts
mW/ C
Maximum Temperature for Soldering
TL
260
C
(1) Mounted on 2” sq. FR–4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 seconds max.
Preferred devices
are Motorola recommended choices for future use and best overall value.
REV 1
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMDJ3N03BJT/D
DUAL BIPOLAR
POWER TRANSISTOR
NPN SILICON
30 VOLTS
3 AMPERES
CASE 751–05, Style 16
(SO–8)
Motorola Preferred Device
Emitter–1
Base–1
Emitter–2
Base–2
1
2
3
4
8
7
6
5
Collector–1
Collector–1
Collector–2
Collector–2
C
B
E
C
B
E
Schematic
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDJ3P03BJT | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL BIPOLAR POWER TRANSISTOR PNP SILICON 30 VOLTS 3 AMPERES |
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| MMDJ-65608EV-45 | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM |
| MMDJ-65608L-25 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
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