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參數(shù)資料
| 型號： | MMFT107T3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Power MOSFET 250 mA, 200 Volts |
| 中文描述： | 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 封裝： | CASE 318E-04, 4 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 118K |
| 代理商： | MMFT107T3 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
N–Channel Enhancement–Mode
Silicon Gate TMOS
SOT–223 for Surface Mount
This TMOS medium power field effect transistor is designed for
high speed, low loss power switching applications such as
switching regulators, dc–dc converters, solenoid and relay drivers.
The device is housed in the SOT–223 package which is designed
for medium power surface mount applications.
Silicon Gate for Fast Switching Speeds
RDS(on) = 14 Ohm Max
Low Drive Requirement
The SOT–223 Package can be soldered using wave or reflow.
The formed leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
Available in 12 mm Tape and Reel
Use MMFT107T1 to order the 7 inch/1000 unit reel
Use MMFT107T3 to order the 13 inch/4000 unit reel
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VGS
ID
PD
200
Volts
Gate–to–Source Voltage — Non–Repetitive
±
20
Volts
Drain Current
Total Power Dissipation @ TA = 25
°
C(1)
Derate above 25
°
C
250
mAdc
0.8
6.4
Watts
mW/
°
C
Operating and Storage Temperature Range
TJ, Tstg
–65 to 150
°
C
DEVICE MARKING
FT107
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Ambient
R
θ
JA
TL
156
°
C/W
Maximum Temperature for Soldering Purposes
Time in Solder Bath
260
10
°
C
Sec
1. Device mounted on FR–4 glass epoxy printed circuit using minimum recommended footprint.
TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMFT107T1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
MEDIUM POWER
TMOS FET
250 mA, 200 VOLTS
RDS(on) = 14 OHM MAX
CASE 318E–04, STYLE 3
TO–261AA
1
2
3
4
2,4 DRAIN
1
GATE
3 SOURCE
REV 3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMFT108T1 | TMOS FET TRANSISTOR N-CHANNEL - ENHANCEMENT |
| MMFT2406T1 | MEDIUM POWER TMOS FET 700 mA 240 VOLTS |
| MMFT2406T | MEDIUM POWER TMOS FET 700 mA 240 VOLTS |
| MMFT2955E | TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS |
| MMFT3055EL | MEDIUM POWER LOGIC LEVEL TMOS FET 1.5 AMP 60 VOLTS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMFT108T1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS FET TRANSISTOR N-CHANNEL - ENHANCEMENT |
| MMFT1N10 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:MEDIUM POWER TMOS FET 1 AMP 100 VOLTS |
| MMFT1N10E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:MEDIUM POWER TMOS FET 1 AMP 100 VOLTS |
| MMFT1N10ET1 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 100V 1A 4-Pin(3+Tab) SOT-223 T/R 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
| MMFT1N10ET3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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