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參數(shù)資料
| 型號： | MMDJ3P03BJT |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | DUAL BIPOLAR POWER TRANSISTOR PNP SILICON 30 VOLTS 3 AMPERES |
| 中文描述： | 3 A, 30 V, 2 CHANNEL, PNP, Si, POWER TRANSISTOR, SO-8 |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 119K |
| 代理商： | MMDJ3P03BJT |
1
Motorola Bipolar Power Transistor Device Data
SO–8 for Surface Mount Applications
Collector –Emitter Sustaining Voltage — VCEO(sus)
= 30 Vdc (Min) @ IC = 10 mAdc
High DC Current Gain — hFE
= 140 (Min) @ IC = 1.2 Adc
= 125 (Min) @ IC = 3.0 Adc
Low Collector –Emitter Saturation Voltage — VCE(sat)
= 0.24 Vdc (Max) @ IC = 1.2 Adc
= 0.60 Vdc (Max) @ IC = 5.0 Adc
Miniature SO–8 Surface Mount Package – Saves Board Space
(1) Mounted on 2” sq. FR–4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 seconds max.
This document contains information on a new product. Specifications and information are subject to change without notice.
(TC = 25
°
C unless otherwise noted)
Collector Current
—
Peak
5.0
Characteristic
Symbol
Max
Unit
R
θ
JC
62.5
C/W
Total Power Dissipation @ TA = 25 C(1)
PD
2.0
Watts
Preferred devices
are Motorola recommended choices for future use and best overall value.
REV 2
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMDJ3P03BJT/D
DUAL BIPOLAR
POWER TRANSISTOR
PNP SILICON
30 VOLTS
3 AMPERES
CASE 751–05, Style 16
(SO–8)
Motorola Preferred Device
Emitter–1
Base–1
Emitter–2
Base–2
1
2
3
4
8
7
6
5
Top View
Collector–1
Collector–1
Collector–2
Collector–2
C
B
E
C
B
E
Schematic
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