參數(shù)資料
型號(hào): MMDFS6N303
廠商: MOTOROLA INC
元件分類(lèi): JFETs
英文描述: 6 A, 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: SO-8
文件頁(yè)數(shù): 9/12頁(yè)
文件大小: 251K
代理商: MMDFS6N303
MMDFS6N303
6
Motorola TMOS Product Preview Data
TYPICAL FET ELECTRICAL CHARACTERISTICS
Figure 13. FET Thermal Response
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
t, TIME (s)
Rthja(t)
,EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
1.0
0.1
D = 0.5
SINGLE PULSE
0.00001
0.0001
0.001
0.01
0.1
1.0
10
0.2
0.1
0.05
0.02
0.01
100
1000
0.001
0.01
CHIP
JUNCTION
0.0106
W
0.0253 F
0.0431
W
0.1406 F
0.1643
W
0.5064 F
0.3507
W
2.9468 F
0.4302
W
177.14 F
AMBIENT
TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS
TJ = 125°C
Figure 15. Typical Forward Voltage
Figure 16. Maximum Forward Voltage
0.7
0.1
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
10
1.0
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.8
0
1.0
0.1
I F
,INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
(AMPS)
0.1
0.4
0.2
0.3
0.5
0.6
0.2
0.3
0.4
0.5
10
I F
,INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
(AMPS)
0.6
0.7
85
°C
25
°C
–40
°C
TJ = 125°C
25
°C
85
°C
0.1
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