參數(shù)資料
型號: MMDFS6N303
廠商: MOTOROLA INC
元件分類: JFETs
英文描述: 6 A, 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: SO-8
文件頁數(shù): 8/12頁
文件大?。?/td> 251K
代理商: MMDFS6N303
MMDFS6N303
5
Motorola TMOS Product Preview Data
TYPICAL FET ELECTRICAL CHARACTERISTICS
Figure 7. Capacitance Variation
Figure 8. Gate–To–Source and
Drain–To–Source Voltage versus Total Charge
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
5.0
30
–10
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)
1200
800
1000
600
QG, TOTAL GATE CHARGE (nC)
16
0
6.0
4.0
2.0
0
100
1.0
RG, GATE RESISTANCE (OHMS)
1000
100
10
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
0.5
5.0
4.0
3.0
2.0
1.0
0
0.6
0.1
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
0.1
0.01
TJ, STARTING JUNCTION TEMPERATURE (°C)
50
150
25
350
300
50
0
1.0
C,
CAP
ACIT
ANCE
(pF)
V
400
200
0
– 5.0
0
10
4.0
8.0
12
10
0.7
0.8
0.9
,DRAIN
CURRENT
(AMPS)
I D
10
1.0
75
100
125
100
E
AS
,SINGLE
PULSE
DRAIN–T
O–SOURCE
15
,GA
TE–T
O–SOURCE
VOL
TAGE
(VOL
TS)
GS
t,TIME
(ns)
I
,SOURCE
CURRENT
(AMPS)
S
100
10
100
10
8.0
150
200
250
A
V
ALANCHE
ENERGY
(mJ)
ID = 6.0 A
VDS = 0 VGS = 0
TJ = 25°C
VGS = 0 V
TJ = 25°C
Ciss
Coss
Crss
ID = 5.0 A
TJ = 25°C
VDS
VGS
QT
Q2
Q1
Q3
td(off)
td(on)
tr
tf
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
dc
VGS = 12 V
SINGLE PULSE
TC = 25°C
VGS
VDS
0
30
20
10
20
25
1.0
Mounted on 2
″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided)
with one die operating,
10 s max.
10 ms
1.0 ms
相關(guān)PDF資料
PDF描述
MMFT3055VT3G 1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
MMFT3055VT3 1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
MMFT6661T1 500 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
MMFT6661T3 500 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
MMFT960T3 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMDFS6N303R2 功能描述:MOSFET N-CH 30V 6A 8-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:FETKY™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
MMDJ3N03BJT 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Plastic Power Transistors SO−8 for Surface Mount Applications
MMDJ3P03BJT 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL BIPOLAR POWER TRANSISTOR PNP SILICON 30 VOLTS 3 AMPERES
MMDJ-65608EV-30 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM
MMDJ-65608EV-30-E 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM