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參數(shù)資料
| 型號(hào)： | MMDF5N02ZR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 5000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 123K |
| 代理商： | MMDF5N02ZR2 |
MMDF5N02Z
http://onsemi.com
5
Figure 8. GateToSource and DrainToSource
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
V
GS
,GA
TET
OSOURCE
VOL
TAGE
(VOL
TS)
Qg, TOTAL GATE CHARGE (nC)
02
4
1
6
ID = 5 A
TJ = 25°C
VGS
4
1
0
6
5
6
5
3
2
0
VDS
Q1
Q2
Q3
810
V
DS
,DRAINT
OSOURCE
VOL
TAGE
(VOL
TS)
t,TIME
(ns)
RG, GATE RESISTANCE (OHMS)
1
100
10
VDD = 6 V
ID = 5 A
VGS = 4.5 V
TJ = 25°C
td(on)
tr
100
10
td(off)
tf
3
2
4
12
14
1000
QT
DRAINTOSOURCE DIODE CHARACTERISTICS
The switching characteristics of a MOSFET body diode
are very important in systems using it as a freewheeling or
commutating diode. Of particular interest are the reverse re-
covery characteristics which play a major role in determin-
ing switching losses, radiated noise, EMI and RFI.
System switching losses are largely due to the nature of
the body diode itself. The body diode is a minority carrier de-
vice, therefore it has a finite reverse recovery time, trr, due
to the storage of minority carrier charge, QRR, as shown in
the typical reverse recovery wave form of Figure 11. It is this
stored charge that, when cleared from the diode, passes
through a potential and defines an energy loss. Obviously,
repeatedly forcing the diode through reverse recovery fur-
ther increases switching losses. Therefore, one would like a
diode with short trr and low QRR specifications to minimize
these losses.
The abruptness of diode reverse recovery effects the
amount of radiated noise, voltage spikes, and current ring-
ing. The mechanisms at work are finite irremovable circuit
parasitic inductances and capacitances acted upon by high
di/dts. The diode’s negative di/dt during ta is directly con-
trolled by the device clearing the stored charge. However,
the positive di/dt during tb is an uncontrollable diode charac-
teristic and is usually the culprit that induces current ringing.
Therefore, when comparing diodes, the ratio of tb/ta serves
as a good indicator of recovery abruptness and thus gives a
comparative estimate of probable noise generated. A ratio of
1 is considered ideal and values less than 0.5 are considered
snappy.
Compared to ON Semiconductor standard cell density
low voltage MOSFETs, high cell density MOSFET diodes
are faster (shorter trr), have less stored charge and a softer re-
verse recovery characteristic. The softness advantage of the
high cell density diode means they can be forced through re-
verse recovery at a higher di/dt than a standard cell MOS-
FET diode without increasing the current ringing or the
noise generated. In addition, power dissipation incurred
from switching the diode will be less due to the shorter re-
covery time and lower switching losses.
0
0.2
0.4
0
1
2
3
VSD, SOURCETODRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
I S
,SOURCE
CURRENT
(AMPS)
VGS = 0 V
TJ = 25°C
0.6
0.8
4
5
0.5
1.5
2.5
3.5
4.5
0.1
0.3
0.5
0.7
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDF6N02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 6.0 AMPERES 20 VOLTS |
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| MMDF6N03HDR2 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 6 Amps, 30 Volts |
| MMDF7N02Z | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 7.0 AMPERES 20 VOLTS |
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