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參數(shù)資料
| 型號： | MMDF5N02ZR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 5000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 123K |
| 代理商： | MMDF5N02ZR2 |
MMDF5N02Z
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(Cpk
≥ 2.0) (Note 4.)
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
20
15
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 12 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
0.5
15
150
Adc
GateBody Leakage Current (VGS = ± 12 Vdc, VDS = 0 Vdc)
IGSS
1.5
Adc
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(Cpk
≥ 2.0) (Note 4.)
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
0.5
0.78
3.0
1.1
Vdc
mV/
°C
Static DraintoSource OnResistance
(Cpk
≥ 2.0) (Note 4.)
(VGS = 4.5 Vdc, ID = 5.0 Adc)
(VGS = 2.7 Vdc, ID = 2.5 Adc)
RDS(on)
34
44
40
50
m
Forward Transconductance (VDS = 9.0 Vdc, ID = 2.0 Adc)
gFS
3.0
5.6
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
10 Vd
V
0Vd
Ciss
450
630
pF
Output Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
330
460
Transfer Capacitance
f = 1.0 MHz)
Crss
160
225
SWITCHING CHARACTERISTICS (Note 3.)
TurnOn Delay Time
td(on)
29
37
ns
Rise Time
(VDD = 6.0 Vdc, ID = 5.0 Adc,
tr
182
258
TurnOff Delay Time
(VDD
6.0 Vdc, ID
5.0 Adc,
VGS = 4.5 Vdc, RG = 6 )
td(off)
190
238
Fall Time
tf
225
274
Gate Charge
QT
10.7
12
nC
(VDS = 10 Vdc, ID = 5.0 Adc,
Q1
1.1
(VDS
10 Vdc, ID
5.0 Adc,
VGS = 4.5 Vdc)
Q2
5.4
Q3
3.5
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 5.0 Adc, VGS = 0 Vdc)
(IS = 5.0 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
0.78
0.65
1.0
Vdc
Reverse Recovery Time
(I
50Ad
V
0Vd
trr
195
ns
(IS = 5.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
ta
72
dIS/dt = 100 A/s)
tb
123
Reverse Recovery Storage Charge
QRR
0.5
C
2. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
4. Reflects typical values.
Cpk =
Max limit Typ
3 x SIGMA
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