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參數(shù)資料
| 型號： | MMDF3N06HD |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | DUAL TMOS POWER MOSFET 60 VOLTS |
| 中文描述： | 3300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MINIATURE, CASE 751-05, SO-8 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 213K |
| 代理商： | MMDF3N06HD |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
I
R
R
0
0
0.4
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
0.8
1.2
1.6
2.0
0
1.0
3.0
Figure 1. On–Region Characteristics
ID
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.2
0.25
0.3
0.06
Figure 3. On–Resistance versus
Gate–to–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0
1000
Figure 5. On–Resistance Variation
with Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–to–Source Leakage Current
versus Voltage
VDS
≥
10 V
TJ = –55
°
C
100
°
C
0.15
4.0
2.0
0.05
TJ = 25
°
C
2.0
4.0
6.0
5.0
1.0
1.5
2.0
2.5
3.0
3.5
0.1
0.09
1.0
1.5
2.0
3.5
5.0
10
0
5.0
10
15
30
2.3 V
2.1 V
20
25
0
0.07
0.085
3.0
2.0
3.0
4.0
5.0
8.0
6.0
7.0
9.0
10
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
2.5
3.0
10 V
VGS = 4.5 V
TJ = 25
°
C
R
TJ, JUNCTION TEMPERATURE (
°
C)
–50
0
50
100
150
0
0.2
1.0
1.2
1.8
VGS = 10 V
ID = 1.5 A
125
75
25
–25
VGS = 0 V
TJ = 125
°
C
0.2
0.6
1.8
1.4
1.0
5.0
6.0
4.5 V
4.3 V
4.1 V
VGS = 10 V
6.0 V
ID = 3.0 A
TJ = 25
°
C
1.75
2.75
2.25
3.25
0.065
0.075
0.08
4.5
4.0
0.4
0.6
0.8
1.4
1.6
1.0
100
25
°
C
2.5 V
2.7 V
2.9 V
3.1 V
3.3 V
3.5 V
3.7 V
3.9 V
25
°
C
100
°
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDF3N06VL | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 3 Amps, 60 Volts N−Channel SO−8, Dual |
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| MMDF4C03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS |
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