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參數(shù)資料
| 型號： | MMDF4C03HD |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS |
| 中文描述： | 5500 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MINIATURE, CASE 751-05, SO-8 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 275K |
| 代理商： | MMDF4C03HD |
1
Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Surface Mount Products
MiniMOS devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process.
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
MiniMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in
portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and tape drives.
Ultra Low RDS(on) Provides Higher Efficiency and
Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package —
Saves Board Space
Ideal for Synchronous Rectification
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
VDSS
VGS
ID
Polarity
—
—
N–Channel
P–Channel
N–Channel
P–Channel
—
Value
30
±
20
5.5
4.4
25
20
Unit
Vdc
Vdc
Adc
Drain–to–Source Voltage
Gate–to–Source Voltage
Drain Current — Continuous
Drain Current — Pulsed
IDM
Apk
Operating and Storage Temperature Range
Total Power Dissipation @ TA = 25
°
C (1)
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 30 Vdc, VGS = 5.0 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 )
(VDD = 30 Vdc, VGS = 5.0 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 )
Thermal Resistance — Junction–to–Ambient (1)
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from Case for 10 sec.
DEVICE MARKING
D4C03
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
ORDERING INFORMATION
Device
Reel Size
MMDF4C03HDR2
13
″
12 mm embossed tape
This document contains information on a new product. Specifications and information herein are subject to change without notice.
HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
TJ, Tstg
PD
EAS
–55 to +150
2.5
°
C
Watts
mJ
N–Channel
325
P–Channel
450
50
260
R
θ
JA
TL
°
C/W
°
C
Tape Width
Quantity
2500
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
Order this document
by MMDF4C03HD/D
SEMICONDUCTOR TECHNICAL DATA
N–Source
N–Gate
P–Source
P–Gate
1
2
3
4
8
7
6
5
Top View
Drain
Drain
Drain
Drain
P–G
CASE 751–05, Style 11
SO–8
COMPLEMENTARY
DUAL TMOS POWER FET
30 VOLTS
N–CH RDS(on) = 50 m
P–CH RDS(on) = 85 m
Motorola Preferred Device
N–S
D
P–S
N–G
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