- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369920 > MMDF5N02Z (Motorola, Inc.) DUAL TMOS POWER MOSFET 5.0 AMPERES 20 VOLTS PDF資料下載
參數(shù)資料
| 型號： | MMDF5N02Z |
| 廠商： | Motorola, Inc. |
| 英文描述： | DUAL TMOS POWER MOSFET 5.0 AMPERES 20 VOLTS |
| 中文描述： | 偶的TMOS功率MOSFET 5.0安培20伏特 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 186K |
| 代理商： | MMDF5N02Z |
1
Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Surface Mount Products
!
EZFETs
are an advanced series of power MOSFETs which
utilize Motorola’s High Cell Density HDTMOS process and contain
monolithic back–to–back zener diodes. These zener diodes
provide protection against ESD and unexpected transients. These
miniature surface mount MOSFETs feature low RDS(on) and true
logic level performance. They are capable of withstanding high
energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
EZFET devices are designed for use in low voltage, high speed
switching applications where power efficiency is important.
Zener Protected Gates Provide Electrostatic Discharge Protection
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
VDSS
VDGR
VGS
ID
ID
IDM
PD
TJ, Tstg
R
θ
JA
TL
Value
20
20
±
12
5.0
4.5
40
2.0
– 55 to 150
62.5
260
Unit
Vdc
Vdc
Vdc
Adc
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25
°
C
Drain Current
— Continuous @ TA = 70
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
Total Power Dissipation @ TA = 25
°
C (1)
Operating and Storage Temperature Range
Thermal Resistance — Junction to Ambient
Maximum Temperature for Soldering
(1) When mounted on 1 inch square FR–4 or G–10 board (VGS = 4.5 V, @ 10 Seconds)
Apk
Watts
°
C
°
C/W
°
C
DEVICE MARKING
ORDERING INFORMATION
D5N02Z
Device
Reel Size
13
″
Tape Width
12 mm embossed tape
Quantity
2500 units
MMDF5N02ZR2
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices
are Motorola recommended choices for future use and best overall value.
Designer’s, HDTMOS and EZFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trade-
mark of the Bergquist Company.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMDF5N02Z/D
DUAL TMOS
POWER MOSFET
5.0 AMPERES
20 VOLTS
RDS(on) = 0.040 OHM
CASE 751–05, Style 11
SO–8
Motorola Preferred Device
Source1
Gate1
Source2
Gate2
1
2
3
4
8
7
6
5
Top View
Drain1
Drain1
Drain2
Drain2
D
S
G
REV 1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMDF6N03HD | DUAL TMOS POWER MOSFET 30 VOLTS |
| MMSF3P03HDR2 | TMOS P-CHANNEL FIELD EFFECT TRANSISTORS |
| MMSF3PO3HD | TMOS P-CHANNEL FIELD EFFECT TRANSISTORS |
| MMSZ5227BT1 | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| MMSZ5229BS | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDF6N02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 6.0 AMPERES 20 VOLTS |
| MMDF6N02HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MMDF6N03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 30 VOLTS |
| MMDF6N03HDR2 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 6 Amps, 30 Volts |
| MMDF7N02Z | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 7.0 AMPERES 20 VOLTS |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。