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參數(shù)資料
| 型號(hào)： | MMDF2P01HD |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS |
| 中文描述： | 2 A, 12 V, 0.2 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 751-05, SOIC-8 |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大?。?/td> | 284K |
| 代理商： | MMDF2P01HD |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)(1)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
12
—
—
17
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 12 Vdc, VGS = 0 Vdc)
(VDS = 12 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
8.0 Vdc, VDS = 0)
ON CHARACTERISTICS(2)
IDSS
—
—
—
—
1.0
10
μ
Adc
IGSS
—
—
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Temperature Coefficient (Negative)
VGS(th)
0.7
—
1.0
3.0
1.1
—
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 2.0 Adc)
(VGS = 2.7 Vdc, ID = 1.0 Adc)
RDS(on)
—
—
0.16
0.2
0.180
0.220
Ohm
Forward Transconductance (VDS = 2.5 Vdc, ID = 1.0 Adc)
gFS
3.0
4.75
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
Crss
—
530
740
pF
Output Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,
—
410
570
Reverse Transfer Capacitance
—
177
250
SWITCHING CHARACTERISTICS(3)
Turn–On Delay Time
RG = 6.0
)
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
—
21
45
ns
Rise Time
(VDD = 6.0 Vdc, ID = 2.0 Adc,
VGS = 2.7 Vdc,
—
156
315
Turn–Off Delay Time
—
38
75
Fall Time
—
68
135
Turn–On Delay Time
RG = 6.0
)
—
16
35
Rise Time
(VDS = 6.0 Vdc, ID = 2.0 Adc,
VGS = 4.5 Vdc,
—
44
90
Turn–Off Delay Time
—
68
135
Fall Time
—
54
110
Gate Charge
VGS = 4.5 Vdc)
—
9.3
13
nC
(VDS = 10 Vdc, ID = 2.0 Adc,
—
0.8
—
—
4.0
—
—
3.0
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage(2)
(IS = 2.0 Adc, VGS = 0 Vdc)
(IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
1.69
1.2
2.0
—
Vdc
Reverse Recovery Time
dIS/dt = 100 A/
μ
s)
trr
—
48
—
ns
(IS = 2.0 Adc, VGS = 0 Vdc,
ta
tb
—
23
—
—
25
—
Reverse Recovery Stored Charge
QRR
—
0.05
—
μ
C
(1) Negative sign for P–Channel device omitted for clarity.
(2) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(3) Switching characteristics are independent of operating junction temperature.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDF2P01HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MMDF2P02E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS MOSFET 2.5 AMPERES 25 VOLTS |
| MMDF2P02ER2 | 功能描述:MOSFET 25V 2A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF2P02ER2G | 功能描述:MOSFET PFET 25V 2.5A 250MO RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF2P02ER2G-ND | 制造商:ON Semiconductor 功能描述: |
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