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參數(shù)資料
| 型號(hào)： | MMDF2N05ZR2 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 2000 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大?。?/td> | 191K |
| 代理商： | MMDF2N05ZR2 |
1
Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Surface Mount Products
!
EZFETs
are an advanced series of power MOSFETs which
utilize Motorola’s High Cell Density TMOS process and contain
monolithic back–to–back zener diodes. These zener diodes
provide protection against ESD and unexpected transients. These
miniature surface mount MOSFETs feature ultra low RDS(on) and
true logic level performance. They are capable of withstanding high
energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
EZFET devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in
portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and tape drives.
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
VDSS
VDGR
VGS
ID
ID
IDM
PD
TJ, Tstg
R
θ
JA
TL
Value
50
50
±
15
2.0
1.7
8.0
2.0
– 55 to 150
62.5
260
Unit
Vdc
Vdc
Vdc
Adc
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25
°
C
Drain Current
— Continuous @ TA = 70
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
Total Power Dissipation @ TA = 25
°
C (1)
Operating and Storage Temperature Range
Thermal Resistance — Junction to Ambient
Maximum Temperature for Soldering Purposes
Apk
Watts
°
C
°
C/W
°
C
DEVICE MARKING
D2N05Z
ORDERING INFORMATION
Device
Reel Size
13
″
Tape Width
Quantity
MMDF2N05ZR2
(1) When mounted on G10/FR–4 glass epoxy board using minimum recommended footprint.
12 mm embossed tape
2500 units
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices
are Motorola recommended choices for future use and best overall value.
Designer’s, HDTMOS and EZFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trade-
mark of the Bergquist Company.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMDF2N05ZR2/D
DUAL TMOS
POWER MOSFET
2.0 AMPERES
50 VOLTS
RDS(on) = 0.300 OHM
CASE 751–05, Style 11
SO–8
D
S
G
Source–1
Gate–1
Source–2
Gate–2
1
2
3
4
8
7
6
5
Top View
Drain–1
Drain–1
Drain–2
Drain–2
Motorola Preferred Device
REV 1
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