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參數(shù)資料
| 型號(hào)： | MMDF2C03HD |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS |
| 中文描述： | 2 A, 30 V, 0.09 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 751-05, SOIC-8 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大小： | 381K |
| 代理商： | MMDF2C03HD |
3
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS — continued
(TA = 25
°
C unless otherwise noted)(1)
Characteristic
Symbol
Polarity
Min
Typ
Max
Unit
SOURCE–DRAIN DIODE CHARACTERISTICS
(TC = 25
°
C)
Forward Voltage(2)
(IS = 3.0 Adc, VGS = 0 Vdc)
(IS = 2.0 Adc, VGS = 0 Vdc)
VSD
(N)
(P)
—
—
0.82
1.82
1.2
2.0
Vdc
Reverse Recovery Time
(IF = IS,
dIS/dt = 100 A/
μ
s)
trr
(N)
(P)
—
—
24
42
—
—
ns
ta
(N)
(P)
—
—
17
16
—
—
tb
(N)
(P)
—
—
7.0
26
—
—
Reverse Recovery Storage Charge
QRR
(N)
(P)
—
—
0.025
0.043
—
—
μ
C
(1) Negative signs for P–Channel device omitted for clarity.
(2) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
TYPICAL ELECTRICAL CHARACTERISTICS
N–Channel
P–Channel
3.9 V
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
0
0.4
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
0.8
1.2
1.6
2
0
1
3
ID
4
2
TJ = 25
°
C
2.7 V
2.5 V
0.2
0.6
1.8
1.4
1
5
6
2.9 V
3.1 V
3.3 V
3.5 V
3.7 V
4.5 V
4.3 V
4.1 V
3.9 V
VGS = 10 V
0
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
VDS
≥
10 V
25
°
C
2
4
6
5
1
2
2.5
3
3.5
4
3
0
0.2
0.4
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
0.6
0.8
2
0
2
3
4
ID
TJ = 25
°
C
VGS = 10 V
1
1.2
2.7 V
2.5 V
1
1.4
1.6
1.8
1.5
1.7
1.9
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
2.1
2.3
3.7
0
2
3
4
ID
VDS
≥
10 V
TJ = 100
°
C
25
°
C
–55
°
C
2.5
1
2.7
2.9
3.1
3.3
3.5
TJ = 100
°
C
–55
°
C
2.9 V
3.1 V
3.3 V
3.5 V
3.7 V
4.5 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDF2C03HDR2 | 功能描述:MOSFET 30V 2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF2C03HDR2G | 功能描述:MOSFET COMP S08C 30V 4.1A 70mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF2C03HDR2G | 制造商:ON Semiconductor 功能描述:MOSFET |
| MMDF2N02E | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 2 Amps, 25 Volts N−Channel SO−8, Dual |
| MMDF2N02ER2 | 功能描述:MOSFET 25V 2A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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