參數(shù)資料
型號(hào)： MMDF2C03HD
廠商： MOTOROLA INC
元件分類： JFETs
英文描述： COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS
中文描述： 2 A, 30 V, 0.09 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝： CASE 751-05, SOIC-8
文件頁(yè)數(shù)： 2/12頁(yè)
文件大?。?/td> 381K
代理商： MMDF2C03HD
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)(1)
Characteristic
Symbol
Polarity
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
ON CHARACTERISTICS(2)
V(BR)DSS
—
30
—
—
Vdc
IDSS
(N)
(P)
—
—
—
—
1.0
1.0
μ
Adc
IGSS
—
—
—
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 3.0 Adc)
(VGS = 10 Vdc, ID = 2.0 Adc)
Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 1.5 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
Forward Transconductance
(VDS = 3.0 Vdc, ID = 1.5 Adc)
(VDS = 3.0 Vdc, ID = 1.0 Adc)
VGS(th)
(N)
(P)
1.0
1.0
1.7
1.5
3.0
2.0
Vdc
RDS(on)
(N)
(P)
—
—
0.06
0.17
0.070
0.200
Ohm
RDS(on)
(N)
(P)
—
—
0.065
0.225
0.075
0.300
Ohm
gFS
(N)
(P)
2.0
2.0
3.6
3.4
—
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
(N)
(P)
—
—
450
397
630
550
pF
Output Capacitance
(VDS = 24 Vdc, VGS = 0
Vdc,
Coss
(N)
(P)
—
—
160
189
225
250
Transfer Capacitance
Crss
(N)
(P)
—
—
35
64
70
126
SWITCHING CHARACTERISTICS(3)
Turn–On Delay Time
(VDD = 15 Vdc, ID = 3.0
Adc,
VGS = 4.5 Vdc,
RG = 9.1
)
td(on)
(N)
(P)
—
—
12
16
24
32
ns
Rise Time
RG = 6.0
)
tr
(N)
(P)
—
—
65
18
130
36
Turn–Off Delay Time
(VDD = 15 Vdc, ID = 2.0
Adc,
VGS = 4.5 Vdc,
td(off)
(N)
(P)
—
—
16
63
32
126
Fall Time
tf
(N)
(P)
—
—
19
194
38
390
Turn–On Delay Time
(VDD = 15 Vdc, ID = 3.0
Adc,
VGS = 10 Vdc,
RG = 9.1
)
td(on)
(N)
(P)
—
—
8.0
9.0
16
18
Rise Time
RG = 6.0
)
tr
(N)
(P)
—
—
15
10
30
20
Turn–Off Delay Time
(VDD = 15 Vdc, ID = 2.0
Adc,
VGS = 10 Vdc,
td(off)
(N)
(P)
—
—
30
81
60
162
Fall Time
tf
(N)
(P)
—
—
23
192
46
384
Total Gate Charge
VGS = 10 Vdc)
VGS = 10 Vdc)
QT
(N)
(P)
—
—
11.5
14.2
16
19
nC
Gate–Source Charge
(VDS = 10 Vdc, ID = 3.0 Adc,
(VDS = 24 Vdc, ID = 2.0 Adc,
Q1
(N)
(P)
—
—
1.5
1.1
—
—
Gate–Drain Charge
Q2
(N)
(P)
—
—
3.5
4.5
—
—
Q3
(N)
(P)
—
—
2.8
3.5
—
—
(1) Negative signs for P–Channel device omitted for clarity.
(2) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(3) Switching characteristics are independent of operating junction temperature.
(continued)
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