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參數(shù)資料
| 型號： | MMDF2C02HDR2 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 3.8 A, 20 V, 0.09 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 356K |
| 代理商： | MMDF2C02HDR2 |
MMDF2C02HD
6
Motorola TMOS Power MOSFET Transistor Device Data
N–Channel
P–Channel
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (Volts)
C,
CAP
ACIT
ANCE
(pF)
400
600
800
1200
1000
10
0
10
15
VGS
VDS
5
Ciss
Coss
Crss
200
VDS = 0 V
VGS = 0 V
Ciss
Crss
0
20
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (Volts)
C,
CAP
ACIT
ANCE
(pF)
400
800
1000
1400
Figure 7. Capacitance Variation
1200
10
0
10
15
20
VGS
VDS
5
Crss
TJ = 25°C
Ciss
Coss
Crss
200
Ciss
600
VDS = 0 V
VGS = 0 V
Figure 7. Capacitance Variation
TJ = 25°C
RG, GATE RESISTANCE (OHMS)
1
10
100
1000
100
10
t,
TIME
(ns)
VDD = 10 V
ID = 2 A
VGS = 10 V
TJ = 25°C
tr
td(off)
td(on)
tf
18
V
GS
,GA
TE-T
O-SOURCE
VOL
TAGE
(VOL
TS)
15
12
9
3
0
10
6
2
0
QT, TOTAL GATE CHARGE (nC)
V
DS
,DRAIN-T
O-SOURCE
VOL
TAGE
(VOL
TS)
12
8
4
16
ID = 2 A
TJ = 25°C
4
VDS
VGS
QT
Q2
Q3
Q1
8
12
6
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
RG, GATE RESISTANCE (OHMS)
1
10
100
10
1
t,
TIME
(ns)
VDD = 10 V
ID = 3 A
VGS = 10 V
TJ = 25°C
tr
tf
td(off)
td(on)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
24
V
GS
,GA
TE–T
O–SOURCE
VOL
TAGE
(VOL
TS)
20
16
12
8
4
0
10
6
2
0
QT, TOTAL GATE CHARGE (nC)
v
DS
,DRAIN–T
O–SOURCE
VOL
TAGE
(VOL
TS)
12
8
4
2
4
6
8
14
ID = 3 A
TJ = 25°C
10
12
VDS
VGS
QT
Q2
Q3
Q1
100
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
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相關(guān)代理商/技術(shù)參數(shù) |
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