參數(shù)資料
型號(hào): MMDF2C02HDR2
廠商: MOTOROLA INC
元件分類: JFETs
英文描述: 3.8 A, 20 V, 0.09 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝: SO-8
文件頁數(shù): 7/12頁
文件大?。?/td> 356K
代理商: MMDF2C02HDR2
MMDF2C02HD
4
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
N–Channel
P–Channel
TJ = 25°C
10 V
VGS = 4.5 V
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
TJ, JUNCTION TEMPERATURE (°C)
– 50
0
50
100
150
0.6
VGS = 10 V
ID = 2 A
1.4
1.0
(NORMALIZED)
– 25
25
75
125
0.8
1.6
1.2
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0.04
ID, DRAIN CURRENT (AMPS)
0.20
0.08
0
1.0
2.0
3.0
4.0
0.16
0.12
0.5
1.5
2.5
3.5
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
2
4
10
0.6
0.4
6
8
0.2
0
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
1
2
3
4
10
0
0.2
0.4
0.6
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–To–Source Voltage
ID = 1.5 A
TJ = 25°C
5
6
7
8
9
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
0
1
2
3
4
6
0.05
0.06
0.07
0.08
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0.6
1
1.2
1.4
1.6
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
TJ = 25°C
VGS = 4.5 V
VGS = 10 V
ID = 1.5 A
5
10 V
– 50
– 25
0
25
50
75
100
125
150
0.8
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus
Gate–To–Source Voltage
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
ID = 1 A
TJ = 25°C
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