參數(shù)資料
型號(hào): MMDF2C01HDR2
廠商: MOTOROLA INC
元件分類: JFETs
英文描述: 5.2 A, 20 V, 0.055 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝: SO-8
文件頁(yè)數(shù): 9/12頁(yè)
文件大小: 372K
代理商: MMDF2C01HDR2
MMDF2C01HD
6
Motorola TMOS Power MOSFET Transistor Device Data
N–Channel
P–Channel
400
800
1200
2000
1600
8
0
8
12
VGS
VDS
4
TJ = 25°C
Ciss
Coss
Crss
VDS = 0 V
VGS = 0 V
0
Ciss
Crss
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)
C,
CAP
ACIT
ANCE
(pF)
Figure 7. Capacitance Variation
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
RG, GATE RESISTANCE (OHMS)
0.1
10
100
10
1
t,
TIME
(ns)
VDD = 6 V
ID = 4 A
VGS = 4.5 V
TJ = 25°C
tr
tf
td(off)
td(on)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
10
V
GS
,GA
TE–T
O–SOURCE
VOL
TAGE
(VOL
TS)
8
6
4
2
0
4
2
0
QT, TOTAL CHARGE (nC)
V
DS
,DRAIN–T
O–SOURCE
VOL
TAGE
(VOL
TS)
5
3
1
2
4
6
8
10
ID = 4 A
TJ = 25°C
VDS
VGS
Q2
Q3
Q1
1
QT
400
800
1200
2000
1600
8
0
8
12
VGS
VDS
4
TJ = 25°C
VDS = 0 V
VGS = 0 V
0
Crss
Ciss
Coss
Crss
Ciss
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (Volts)
C,
CAP
ACIT
ANCE
(pF)
Figure 7. Capacitance Variation
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
10
V
GS
,GA
TE–T
O–SOURCE
VOL
TAGE
(VOL
TS)
8
6
4
2
0
4
2
0
QT, TOTAL CHARGE (nC)
V
DS
,DRAIN–T
O–SOURCE
VOL
TAGE
(VOL
TS)
5
3
1
2
4
6
8
10
ID = 2 A
TJ = 25°C
VDS
VGS
QT
Q2
Q3
Q1
RG, GATE RESISTANCE (OHMS)
1
10
100
1000
100
10
t,
TIME
(ns)
VDD = 6 V
ID = 2 A
VGS = 4.5 V
TJ = 25°C
tr
tf
td(off)
td(on)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
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