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參數(shù)資料
| 型號(hào)： | MMDF2C01HDR2 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 5.2 A, 20 V, 0.055 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 372K |
| 代理商： | MMDF2C01HDR2 |
MMDF2C01HD
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1)
Characteristic
Symbol
Polarity
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
V(BR)DSS
(N)
(P)
20
12
—
Vdc
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = 20 Vdc)
(VGS = 0 Vdc, VDS = 12 Vdc)
IDSS
(N)
(P)
—
1.0
Adc
Gate–Body Leakage Current
(VGS = ± 8.0 Vdc, VDS = 0)
IGSS
—
100
nAdc
ON CHARACTERISTICS(2)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
VGS(th)
(N)
(P)
0.7
0.8
1.0
1.1
Vdc
Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 4.0 Adc)
(VGS = 4.5 Vdc, ID = 2.0 Adc)
RDS(on)
(N)
(P)
—
0.035
0.16
0.045
0.18
Ohm
Drain–to–Source On–Resistance
(VGS = 2.7 Vdc, ID = 2.0 Adc)
(VGS = 2.7 Vdc, ID = 1.0 Adc)
RDS(on)
(N)
(P)
—
0.043
0.2
0.055
0.22
Ohm
Forward Transconductance
(VDS = 2.5 Adc, ID = 2.0 Adc)
(VDS = 2.5 Adc, ID = 1.0 Adc)
gFS
(N)
(P)
3.0
6.0
4.75
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
(N)
(P)
—
425
530
595
740
pF
Output Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
(N)
(P)
—
270
410
378
570
Transfer Capacitance
Crss
(N)
(P)
—
115
177
230
250
SWITCHING CHARACTERISTICS(3)
Turn–On Delay Time
(VDD = 6.0 Vdc, ID = 4.0 Adc,
VGS = 2.7 Vdc,
RG = 2.3 )
(VDD = 6.0 Vdc, ID = 2.0 Adc,
VGS = 2.7 Vdc,
RG = 6.0 )
td(on)
(N)
(P)
—
13
21
26
45
ns
Rise Time
(VDD = 6.0 Vdc, ID = 4.0 Adc,
VGS = 2.7 Vdc,
RG = 2.3 )
(VDD = 6.0 Vdc, ID = 2.0 Adc,
VGS = 2.7 Vdc,
RG = 6.0 )
tr
(N)
(P)
—
60
156
120
315
Turn–Off Delay Time
(VDD = 6.0 Vdc, ID = 2.0 Adc,
VGS = 2.7 Vdc,
RG = 6.0 )
td(off)
(N)
(P)
—
20
38
40
75
Fall Time
VGS = 2.7 Vdc,
RG = 6.0 )
tf
(N)
(P)
—
29
68
58
135
Turn–On Delay Time
(VDS = 6.0 Vdc, ID = 4.0 Adc,
VGS = 4.5 Vdc,
RG = 2.3 )
(VDS = 6.0 Vdc, ID = 2.0 Adc,
VGS = 4.5 Vdc,
RG = 6.0 )
td(on)
(N)
(P)
—
10
16
20
35
Rise Time
(VDS = 6.0 Vdc, ID = 4.0 Adc,
VGS = 4.5 Vdc,
RG = 2.3 )
(VDS = 6.0 Vdc, ID = 2.0 Adc,
VGS = 4.5 Vdc,
RG = 6.0 )
tr
(N)
(P)
—
42
44
84
90
Turn–Off Delay Time
(VDS = 6.0 Vdc, ID = 2.0 Adc,
VGS = 4.5 Vdc,
RG = 6.0 )
td(off)
(N)
(P)
—
24
68
48
135
Fall Time
VGS = 4.5 Vdc,
RG = 6.0 )
tf
(N)
(P)
—
28
54
56
110
Total Gate Charge
(VDS = 10 Vdc, ID = 4.0 Adc,
VGS = 4.5 Vdc)
(VDS = 6.0 Vdc, ID = 2.0 Adc,
VGS = 4.5 Vdc)
QT
(N)
(P)
—
9.2
9.3
13
nC
Gate–Source Charge
(VDS = 10 Vdc, ID = 4.0 Adc,
VGS = 4.5 Vdc)
Q1
(N)
(P)
—
1.3
0.8
—
Gate–Drain Charge
(VDS = 6.0 Vdc, ID = 2.0 Adc,
VGS = 4.5 Vdc)
Q2
(N)
(P)
—
3.5
4.0
—
VGS = 4.5 Vdc)
Q3
(N)
(P)
—
3.0
—
(1) Negative signs for P–Channel device omitted for clarity.
(continued)
(2) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(3) Switching characteristics are independent of operating junction temperature.
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