參數(shù)資料
型號(hào)： MMBT2132T1
廠商： ON SEMICONDUCTOR
元件分類： 小信號(hào)晶體管
英文描述： 43632 LOGIC CELLS 12 ROCKET IOS 2 POWER
中文描述： 700 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： CASE 318F-03, SC-59, 6 PIN
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 113K
代理商： MMBT2132T1
3–1
Motorola Bipolar Power Transistor Device Data
Motorola, Inc. 1998
NPN Bipolar Junction Transistor
(Complementary PNP Device: MMBT2131T1/T3)
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
IB
PD
PD
RJA
30
V
Collector–Base Voltage
40
V
Emitter–Base Voltage
5.0
V
Collector Current
700
mA
Base Current
350
mA
Total Power Dissipation @ TC = 25
°
C
Total Power Dissipation @ TC = 85
°
C
Thermal Resistance — Junction to Ambient (1)
342
178
366
mW
mW
°
C/W
Total Power Dissipation @ TC = 25
°
C
Total Power Dissipation @ TC = 85
°
C
Thermal Resistance — Junction to Ambient (2)
PD
PD
RJA
665
346
188
mW
mW
°
C/W
Operating and Storage Temperature Range
TJ, Tstg
–55 to +150
°
C
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Base Breakdown Voltage
(IC = 100 Adc)
V(BR)CBO
40
—
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = 10 mAdc)
V(BR)CEO
30
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 100 Adc)
V(BR)EBO
5.0
—
—
Vdc
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0 Adc)
(VCB = 25 Vdc, IE = 0 Adc, TA = 125
°
C)
ICBO
—
—
—
—
1.0
10
Adc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0 Adc)
ON CHARACTERISTICS
IEBO
—
—
10
Adc
DC Current Gain
(VCE = 3.0 Vdc, IC = 100 mAdc)
hFE
150
—
—
Vdc
Collector–Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
—
—
0.25
Vdc
Collector–Emitter Saturation Voltage
(IC = 700 mAdc, IB = 70 mAdc)
VCE(sat)
—
—
0.4
Vdc
Base–Emitter Saturation Voltage
(IC = 700 mAdc, IB = 70 mAdc)
VBE(sat)
—
—
1.1
Vdc
Collector–Emitter Saturation Voltage
(IC = 700 mAdc, VCE = 1.0 Vdc)
VBE(on)
—
—
1.0
Vdc
1. Minimum FR–4 or G–10 PCB, Operating to Steady State.
2. Mounted onto a 2
″
square FR–4 Board (1
″
sq. 2 oz Cu 0.06
″
thick single sided), Operating to Steady State.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Order this document
by MMBT2132T1/D
SEMICONDUCTOR TECHNICAL DATA
1
2
4
CASE 318F–02, STYLE 2
SC–59 — 6 Lead
0.7 AMPERES
30 VOLTS — V(BR)CEO
342 mW
COLLECTOR
PINS 2, 5
BASE
PIN 6
EMITTER
PIN 3
3
NPN
5
6
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