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參數(shù)資料
| 型號： | MMBT1010LT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, CASE 318D-04, 3 PIN |
| 文件頁數(shù)： | 10/21頁 |
| 文件大小： | 292K |
| 代理商： | MMBT1010LT3 |
Package Outline Dimensions
8–6
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE OUTLINE DIMENSIONS (continued)
CASE 419–02
SC–70/SOT–323
C
R
N
A
L
D
G
V
S
B
H
J
K
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.071
0.087
1.80
2.20
B
0.045
0.053
1.15
1.35
C
0.035
0.049
0.90
1.25
D
0.012
0.016
0.30
0.40
G
0.047
0.055
1.20
1.40
H
0.000
0.004
0.00
0.10
J
0.004
0.010
0.10
0.25
K
0.017 REF
0.425 REF
L
0.026 BSC
0.650 BSC
N
0.028 REF
0.700 REF
R
0.031
0.039
0.80
1.00
S
0.079
0.087
2.00
2.20
V
0.012
0.016
0.30
0.40
0.05 (0.002)
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 2:
PIN 1. ANODE
2. N.C.
3. CATHODE
STYLE 5:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 7:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. CATHODE
3. CATHODE–ANODE
STYLE 10:
PIN 1. CATHODE
2. ANODE
3. ANODE–CATHODE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
1.80
2.20
0.071
0.087
INCHES
B
1.15
1.35
0.045
0.053
C
0.80
1.10
0.031
0.043
D
0.10
0.30
0.004
0.012
G
0.65 BSC
0.026 BSC
H
–––
0.10
–––
0.004
J
0.10
0.25
0.004
0.010
K
0.10
0.30
0.004
0.012
N
0.20 REF
0.008 REF
S
2.00
2.20
0.079
0.087
V
0.30
0.40
0.012
0.016
B
0.2 (0.008) MM
12
3
A
G
V
S
H
C
N
J
K
65
4
–B–
D 6 PL
CASE 419B-01
SOT–363
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
STYLE 6:
PIN 1. ANODE 2
2. N/C
3. CATHODE 1
4. ANODE 1
5. N/C
6. CATHODE 2
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