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參數(shù)資料
| 型號(hào)： | MMBR951 |
| 廠商： | Motorola, Inc. |
| 英文描述： | Low Noise High-Frequency Transistor(低噪聲高頻率晶體管) |
| 中文描述： | 低噪聲高頻晶體管（低噪聲高頻率晶體管） |
| 文件頁數(shù)： | 9/13頁 |
| 文件大?。?/td> | 211K |
| 代理商： | MMBR951 |
9
MMBR951 MRF957
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
MRF957T1
0
10
0.1
1
IC, COLLECTOR CURRENT (mA)
Figure 13. Gain–Bandwidth Product versus
Collector Current
Figure 14. Associated Gain versus
Collector Current
f
10
8
6
4
2
100
20
16
12
8
4
30
20
10
1
2
5
G
IC, COLLECTOR CURRENT (mA)
NF
VCE = 6 V
f = 1 GHz
3
2
1
N
32
28
24
20
16
12
8
4
00.1
0.2
0.3
0.5
1
2
3
5.1
G
f, FREQUENCY (GHz)
Figure 15. Insertion Gain and Maximum
Stable Power Gain versus Frequency
MSG
VCE = 6 V
IC = 5 mA
25
20
15
10
5
00.3
0.5
1
1.5
5
4
3
2
1
0
F
N
G
f, FREQUENCY (GHz)
Figure 16. Noise Figure and Associated
Gain versus Frequency
|S21|2
GNF
NF
VCE = 6 V
IC = 5 mA
j2.0
j1.0
j0.5
j0.2
–j0.2
–j0.5
–j1.0
–j2.0
0.2
0.5
1
2
j2.0
j1.0
j0.5
j0.2
–j0.2
–j0.5
–j1.0
–j2.0
0.2
0.5
1
2
f
(GHz)
1.5
NF
OPT
2.0dB 0.21
∠
54
°
14
Γ
o
RN
K
1.02
f
(GHz)
1.0
NF
OPT
1.5dB 0.27
∠
97
°
10
Γ
o
RN
K
0.91
VCE = 6.0 V
IC = 5.0 mA
VCE = 6.0 V
IC = 5.0 mA
Figure 17. Constant Gain and Noise Figure Contours
f = 1.0 GHz
Figure 18. Constant Gain and Noise Figure Contours
f = 1.5 GHz
15.2
15.0
14.0
1.5
2.0
2.3
11.8
11.0
10.0
3.0
2.5
2.0
GNF
AREA OF INSTABILITY
INPUT
OUTPUT
Γ
o
Γ
o
Γ
ms
VCE = 5 V
f = 1 GHz
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