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參數(shù)資料
| 型號： | MMBR951 |
| 廠商： | Motorola, Inc. |
| 英文描述： | Low Noise High-Frequency Transistor(低噪聲高頻率晶體管) |
| 中文描述： | 低噪聲高頻晶體管（低噪聲高頻率晶體管） |
| 文件頁數(shù)： | 3/13頁 |
| 文件大小： | 211K |
| 代理商： | MMBR951 |
3
MMBR951 MRF957
MOTOROLA RF DEVICE DATA
PERFORMANCE CHARACTERISTICS
Conditions
Symbol
MMBR951LT1
MRF957T1
Unit
Min
Typ
Max
Min
Typ
Max
Insertion Gain
(VCE = 6.0 V, IC = 30 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 30 mA, f = 2.0 GHz)
(VCE = 5.0 V, IC = 30 mA, f = 1.5 GHz)
Maximum Unilateral Gain (1)
(VCE = 8.0 V, IC = 30 mA, f = 1.0 GHz)
(VCE = 8.0 V, IC = 30 mA, f = 2.0 GHz)
(VCE = 5.0 V, IC = 30 mA, f = 1.5 GHz)
Noise Figure — Minimum (Figure 9)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 2.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.5 GHz)
Associated Gain at Minimum NF (Figure 9)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 2.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.5 GHz)
Noise Figure — 50 ohm Source
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
NOTE:
1. Maximum Unilateral Gain is GUmax =
|S21|2
—
—
—
12.5
7.0
—
—
—
—
—
—
—
13.3
—
10.1
—
—
—
dB
GU max
—
—
—
14
8.0
—
—
—
—
—
—
—
14
—
10.8
—
—
—
dB
NFMIN
—
—
—
1.3
2.1
—
—
—
—
—
—
—
1.5
—
2.0
—
—
—
dB
GNF
—
—
—
13
7.5
—
—
—
—
—
—
—
11.8
—
9.0
—
—
—
dB
NF50
—
1.9
2.8
—
1.9
2.8
dB
|S21|2
(1–|S11|2)(1–|S22|2)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBR951ALT1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN Silicon Low Noise, High-Frequency Transistors |
| MMBR951LT1 | 制造商:Motorola Inc 功能描述:Bipolar Junction Transistor, NPN Type, TO-236 |
| MMBS5060 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON CONTROLLED RECTIFIERS |
| MMBS5061 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON CONTROLLED RECTIFIERS |
| MMBS5062 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON CONTROLLED RECTIFIERS |
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