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參數(shù)資料
| 型號： | MMBR951 |
| 廠商： | Motorola, Inc. |
| 英文描述： | Low Noise High-Frequency Transistor(低噪聲高頻率晶體管) |
| 中文描述： | 低噪聲高頻晶體管（低噪聲高頻率晶體管） |
| 文件頁數(shù)： | 2/13頁 |
| 文件大小： | 211K |
| 代理商： | MMBR951 |
MMBR951 MRF957
2
MOTOROLA RF DEVICE DATA
MAXIMUM RATINGS0
Rating
Symbol
MMBR951LT1
MRF957T1
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
PD(max)
10
10
Vdc
Collector–Base Voltage
20
20
Vdc
Emitter–Base Voltage
1.5
15
Vdc
Power Dissipation (1) TC = 75
°
C
Derate linearly above Tcase = 75
°
C @
0.322
4.29
0.227
3.03
Watts
mW/
°
C
Collector Current — Continuous (2)
IC
100
100
mA
Maximum Junction Temperature
TJmax
Tstg
R
θ
JC
150
150
°
C
Storage Temperature
–55 to +150
–55 to +150
°
C
Thermal Resistance, Junction to Case
233
330
°
C/W
DEVICE MARKING
MMBR951LT1 = 7Z
MRF957T1 = B
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(3)
Collector–Emitter Breakdown Voltage
(IC = 0.1 mA, IB = 0)
V(BR)CEO
10
13
—
Vdc
Collector–Base Breakdown Voltage
(IC = 0.1 mA, IE = 0)
V(BR)CBO
20
25
—
Vdc
Emitter Cutoff Current
(VEB = 1.0 V, IC = 0)
IEBO
—
—
0.1
μ
Adc
Collector Cutoff Current
(VCB = 10 V, IE = 0)
ICBO
—
—
0.1
μ
Adc
ON CHARACTERISTICS
(3)
DC Current Gain
(VCE = 6.0 V, IC = 5.0 mA)
hFE
50
—
200
—
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
Ccb
—
0.45
1.0
pF
Current Gain — Bandwidth Product
(VCE = 6.0 V, IC = 30 mA, f = 1.0 GHz)
MMBR951LT1
MRF957T1
fT
—
—
8.0
9.0
—
—
GHz
NOTES:
1. To calculate the junction temperature use TJ = (PD x R
θ
JA) + TCASE. Case temperature measured on collector lead immediately adjacent
to body of package.
2. IC — Continuous (MTBF
≈
10 years).
3. Pulse width
≤
300
μ
s, duty cycle
≤
2% pulsed.
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