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參數(shù)資料
| 型號(hào)： | MMBR911LT1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN Silicon High-Frequency Transistor |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 78K |
| 代理商： | MMBR911LT1 |
3
MMBR911LT1
MOTOROLA RF DEVICE DATA
Figure 2. Input Capacitance versus
Base–Emitter Voltage
C
2.5
0
VBE, BASE–EMITTER VOLTAGE (Vdc)
2
1.5
1
0.5
0
1
2
3
Cib
f = 1 MHz
C
,
,
Vcb, COLLECTOR–BASE VOLTAGE (Vdc)
2.5
0
2
1.5
1
0.5
0
1
2
3
4
5
6
7
8
9
10
Cob
Ccb
f = 1 MHz
G
0
IC, COLLECTOR CURRENT (mA)
20
16
12
8
4
0
10
20
30
f = 500 MHz
VCE = 10 V
Figure 3. Output Capacitances versus
Collector–Base Voltage
Figure 4. Gain at Noise Figure versus
Collector Current
1 GHz
Figure 5. Noise Figure versus Collector Current
N
0
IC, COLLECTOR CURRENT (mA)
5
4
3
2
0
10
20
30
VCE = 10 V
f = 1 GHz
500 MHz
G
0.2
f, FREQUENCY (GHz)
25
20
15
10
5
0
0.3
0.5
1
1.5
2
N
5
4
3
2
1
0
VCE = 10 V
IC = 10 mA
GNF
NF
25
0.2
f, FREQUENCY (GHz)
20
15
10
5
0.3
0.5
1
2
30
1.5
VCE = 10 V
IC = 30 mA
GUMAX
|S21|2
G
Figure 6. Gain at Noise Figure and Noise
Figure versus Frequency
Figure 7. Maximum Unilateral Gain and
Insertion Gain versus Frequency
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBR911 | NPN Silicon High-Frequency Transistor |
| MMBR920L | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| MMBR920 | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| MMBR920Lxx | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| MMBR920LT1 | NPN SILICON HIGH FREQUENCY TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBR911LT1G | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:NPN SILICON LOW NOISE, HIGH-FREQUENCY TRANSISTOR |
| MMBR920 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN SILICON HIGH FREQUENCY TRANSISTOR |
| MMBR920L | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN SILICON HIGH FREQUENCY TRANSISTOR |
| MMBR920LT1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN SILICON HIGH FREQUENCY TRANSISTOR |
| MMBR920LT3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN SILICON HIGH FREQUENCY TRANSISTOR |
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