參數(shù)資料
型號: MMBR911LT1
廠商: MOTOROLA INC
元件分類: 小信號晶體管
英文描述: NPN Silicon High-Frequency Transistor
中文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB
文件頁數(shù): 2/6頁
文件大?。?/td> 78K
代理商: MMBR911LT1
MMBR911LT1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mA, IB = 0)
V(BR)CEO
12
Vdc
Collector–Base Breakdown Voltage
(IC = 0.1 mA, IE = 0)
V(BR)CBO
20
Vdc
Emitter–Base Breakdown Voltage
(IE = 0.1 mA, IC = 0)
V(BR)EBO
2.0
Vdc
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
ICBO
50
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 30 mAdc, VCE = 10 Vdc)
hFE
30
200
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Ccb
1.0
pF
Current Gain–Bandwidth Product
(VCE = 10 Vdc, IC = 30 mAdc, f = 1.0 GHz)
fT
6.0
GHz
FUNCTIONAL TESTS
Gain @ Noise Figure
(IC = 10 mAdc, VCE = 10 Vdc)
f = 0.5 GHz
f = 1.0 GHz
GNF
17
11
dB
Noise Figure
(IC = 10 mAdc, VCE = 10 Vdc)
f = 0.5 GHz
f = 1.0 GHz
NF
2.0
2.9
dB
Figure 1. Current Gain–Bandwidth versus
Collector Current @ 1.0 GHz
10
8
6
4
2
0
IC, COLLECTOR CURRENT (mA)
0
10
20
30
40
f
VCE = 10 V
f = 1 GHz
50
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