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參數(shù)資料
| 型號： | MMBF2201PT1 |
| 廠商： | Motorola, Inc. |
| 英文描述： | LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS |
| 中文描述： | 低RDS小訊號MOSFET TMOS是單P通道場效應晶體管 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 142K |
| 代理商： | MMBF2201PT1 |
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL CHARACTERISTICS
C
Figure 3. On Resistance versus Gate–Source
Voltage
GATE–SOURCE VOLTAGE (VOLTS)
Figure 4. On Resistance versus Drain Current
ID, DRAIN CURRENT (AMPS)
R
Figure 5. Source–Drain Forward Voltage
VSD, SOURCE–DRAIN FORWARD VOLTAGE (VOLTS)
Figure 6. Capacitance Variation
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 7. Transfer Characteristics
VGS, GATE–SOURCE VOLTAGE (VOLTS)
2
4
6
8
10
0
7
0
9
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
0
0.1
0
0.5
0.01
0.1
1.0
0.001
0.1
0
20
25
30
35
40
45
0
4
0
8
12
16
20
2
4
1
3
5
0.2
0.3
0.4
0.8
0.6
0.7
R
I
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
2
6
10
14
18
5
10
15
0.2
0.4
0.6
0.8
0.9
1.0
0
0.5
0
2.5
1.0
1.5
2.0
4.0
3.0
3.5
I
4.5
0.3
0.5
0.7
0.1
ID = 300 mA
VGS = 4.5 V
VGS = 10 V
VGS = 0 V
F = 1 mHz
Ciss
Coss
Crss
–55
150
25
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MMBF2202PT1 | 功能描述:MOSFET 20V 300mA P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMBF2202PT1_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 300 mAmps, 20 Volts P-Channel SC-70/SOT-323 |
| MMBF2202PT1G | 功能描述:MOSFET 20V 300mA P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMBF2202PT3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS |
| MMBF4091 | 功能描述:JFET N-Channel Switch RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
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