參數(shù)資料
型號(hào)： MMBF2202PT1
廠商： MOTOROLA INC
元件分類(lèi)： 小信號(hào)晶體管
英文描述： P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
中文描述： 300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 179K
代理商： MMBF2202PT1
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
$ !
"
# !""# !"
Part of the GreenLine
Portfolio of devices with energy–con-
serving traits.
These miniature surface mount MOSFETs utilize Motorola’s High
Cell Density, HDTMOS process. Low rDS(on) assures minimal
power loss and conserves energy, making this device ideal for use
in small power management circuitry. Typical applications are
dc–dc converters, power management in portable and battery–
powered products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
Low rDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SC–70/SOT–323 Surface Mount Package Saves
Board Space
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VGS
ID
ID
IDM
20
Vdc
Gate–to–Source Voltage — Continuous
±
20
Vdc
Drain Current — Continuous @ TA = 25
°
C
Drain Current
— Continuous @ TA = 70
°
C
Drain Current
— Pulsed Drain Current (tp
≤
10
μ
s)
Total Power Dissipation @ TA = 25
°
C(1)
Derate above 25
°
C
300
240
750
mAdc
PD
150
1.2
mW
mW/
°
C
Operating and Storage Temperature Range
TJ, Tstg
R
θ
JA
TL
– 55 to 150
°
C
Thermal Resistance — Junction–to–Ambient
833
°
C/W
Maximum Lead Temperature for Soldering Purposes, for 10 seconds
260
°
C
DEVICE MARKING
P3
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMBF2202PT1
7
″
8 mm embossed tape
3000
MMBF2202PT3
13
″
8 mm embossed tape
10,000
GreenLine is a trademark of Motorola, Inc.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a registered trademark of the Berquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMBF2202PT1/D
SEMICONDUCTOR TECHNICAL DATA
P–CHANNEL
ENHANCEMENT–MODE
TMOS MOSFET
rDS(on) = 2.2 OHM
Motorola Preferred Device
3 DRAIN
1
GATE
2 SOURCE
CASE 419–02, STYLE 7
SC–70/SOT–323
REV 1
相關(guān)PDF資料
PDF描述
MMBF2202PT3 LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS
MMBF4391LT1 JFET Switching Transistors
MMBF4391LT1 JFET Switching Transistors
MMBF4391LT1G JFET Switching Transistors
MMBF4392L JFET Switching Transistors
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBF2202PT1_06 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Power MOSFET 300 mAmps, 20 Volts P-Channel SC-70/SOT-323
MMBF2202PT1G 功能描述:MOSFET 20V 300mA P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MMBF2202PT3 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS
MMBF4091 功能描述:JFET N-Channel Switch RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel
MMBF4091 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL JFET, -40V, SOT-23
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*