參數(shù)資料
型號(hào)： MMBD717LT1D
廠商： ON SEMICONDUCTOR
英文描述： Common Anode Schottky Barrier Diodes
中文描述： 共陽(yáng)極肖特基二極管
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 76K
代理商： MMBD717LT1D
5–1
Motorola, Inc. 1997
These Schottky barrier diodes are designed for high speed switching applications,
circuit protection, and voltage clamping. Extremely low forward voltage reduces
conduction loss. Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
Extremely Fast Switching Speed
Extremely Low Forward Voltage — 0.28 Volts (Typ) @ IF = 1 mAdc
MAXIMUM RATINGS
(TJ = 125
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
PF
20
Volts
Forward Power Dissipation
@ TA = 25
°
C
Derate above 25
°
C
200
1.6
mW
mW/
°
C
Operating Junction
Temperature Range
TJ
–55 to +150
°
C
Storage Temperature Range
Tstg
–55 to +150
°
C
DEVICE MARKING
MMBD717LT1 = B3
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR = 10
μ
A)
V(BR)R
20
—
—
Volts
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT
—
2.0
2.5
pF
Reverse Leakage
(VR = 10 V)
IR
—
0.05
1.0
μ
Adc
Forward Voltage
(IF = 1.0 mAdc)
VF
—
0.28
0.37
Vdc
Preferred
devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a registered trademark of the Bergquist Company.
Order this document
by MMBD717LT1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
20 VOLT
SCHOTTKY BARRIER
DETECTOR AND SWITCHING
DIODES
1
2
3
CASE 419–02, STYLE 2
SOT–323 (SC–70)
ANODE
3
CATHODE
1
2
CATHODE
REV 3
相關(guān)PDF資料
PDF描述
MMBF0201N N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
MMBF0201 N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
MMBF2201NT1 N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
MMBF2201PT1 LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS
MMBF2202PT1 P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBD717LT1G 功能描述:肖特基二極管與整流器 20V 200mW Dual Common Anode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MMBD717S 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:SURFACE MOUNT SCHOTTKY DIODES
MMBD717S-T1 制造商:WTE 制造商全稱:Won-Top Electronics 功能描述:SURFACE MOUNT SCHOTTKY BARRIER DIODE
MMBD717SW 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:COMMON ANODE SCHOTTKY BARRIER DIODES
MMBD717SW-T1 制造商:WTE 制造商全稱:Won-Top Electronics 功能描述:SURFACE MOUNT SCHOTTKY BARRIER DIODE
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*