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參數(shù)資料
| 型號： | MMBD352WT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Dual Schottky Barrier Diode |
| 中文描述： | 雙肖特基二極管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 41K |
| 代理商： | MMBD352WT1 |
Dual Hot Carrier Mixer Diodes
These devices are designed primarily for UHF mixer applications
but are suitable also for use in detector and ultra–fast switching
circuits.
Very Low Capacitance — Less Than 1.0 pF @ Zero Volts
Low Forward Voltage — 0.5 Volts (Typ) @ IF = 10 mA
MAXIMUM RATINGS
(EACH DIODE)
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
VR
7.0
VCC
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board(1)
TA = 25
°
C
Derate above 25
°
C
PD
225
1.8
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
RJA
PD
556
°
C/W
Total Device Dissipation
Alumina Substrate(2) TA = 25
°
C
Derate above 25
°
C
300
2.4
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
RJA
TJ, Tstg
417
°
C/W
Junction and Storage Temperature
–55 to +150
°
C
DEVICE MARKING
MMBD352LT1 = M5G; MMBD353LT1 = M4F; MMBD354LT1 = M6H; MMBD355LT1 = MJ1
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
(EACH DIODE)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Forward Voltage
(IF = 10 mAdc)
VF
—
0.60
V
Reverse Voltage Leakage Current (Note 3.)
(VR = 3.0 V)
(VR = 7.0 V)
IR
—
—
0.25
10
A
Capacitance
(VR = 0 V, f = 1.0 MHz)
C
—
1.0
pF
1. FR–5 = 1.0
2. Alumina = 0.4
3. For each individual diode while the second diode is unbiased.
0.75
0.3
0.062 in.
0.024 in. 99.5% alumina.
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
November, 2001 – Rev. 4
1
Publication Order Number:
MMBD352LT1/D
MMBD352LT1
MMBD353LT1
MMBD354LT1
MMBD355LT1
1
2
3
MMBD352LT1
CASE 318–08, STYLE 11
SOT–23 (TO–236AB)
1
ANODE
3
CATHODE/ANODE
2
CATHODE
MMBD353LT1
CASE 318–08, STYLE 19
SOT–23 (TO–236AB)
1
CATHODE
3
CATHODE/ANODE
2
ANODE
MMBD354LT1
CASE 318–08, STYLE 9
SOT–23 (TO–236AB)
3
CATHODE
2
ANODE
ANODE
1
ANODE
3
CATHODE
1
2
CATHODE
MMBD355LT1
CASE 318–08, STYLE 12
SOT–23 (TO–236AB)
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|---|---|
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| MMBD353LT1 | Dual Hot Carrier Mixer Diodes |
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| MMBT2131T3 | General Purpose Transistors |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBD352WT1_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual Schottky Barrier Diode |
| MMBD352WT1G | 功能描述:肖特基二極管與整流器 7V 225mW Dual RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MMBD353 | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE |
| MMBD353LT1 | 功能描述:整流器 7V 225mW Dual RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MMBD353LT1G | 功能描述:整流器 7V 225mW Dual RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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