- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371116 > MJF6668 (MOTOROLA INC) COMPLEMENTARY SILICON POWER DARLINGTONS 10 AMPERES 100 VOLTS 40 WATTS PDF資料下載
參數(shù)資料
| 型號(hào)： | MJF6668 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | COMPLEMENTARY SILICON POWER DARLINGTONS 10 AMPERES 100 VOLTS 40 WATTS |
| 中文描述： | 10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220 |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 338K |
| 代理商： | MJF6668 |
4
Motorola Bipolar Power Transistor Device Data
t, TIME (ms)
0.01
0.01
0.05
1
2
5
10
20
50
500
100K
0.1
0.5
0.2
1
0.2
0.1
0.05
r
R
θ
JC(t) = r(t) R
θ
JC
R
θ
JC =
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
R
Figure 5. Thermal Response
0.5
D = 0.5
0.3
0.03
0.02
0.02
100
200
3
30
0.3
300
1K
2K
5K
10K 20K
50K
3K
30K
0.2
0.1
0.05
TC, CASE TEMPERATURE (
°
C)
0
40
120
160
0.6
P
SECOND BREAKDOWN
DERATING
1
0.8
0.4
0.2
60
100
140
80
THERMAL
DERATING
20
Figure 6. Maximum Power Derating
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 4 is based on TJ(pk) = l50 C; TC is
variable depending on conditions. Secondary breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150 C. TJ(pk) may be calculated from the data in Figure 5.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by secondary breakdown.
Figure 7. Typical Small–Signal Current Gain
f, FREQUENCY (kHz)
h
TC = 25
°
C
VCE = 4 Vdc
IC = 3 Adc
10,000
200
100
1000
500
300
10
30
20
2000
3000
5000
1
1000
50
10
5
100
500
2
20
200
50
f, FREQUENCY (kHz)
h
10,000
200
100
1000
500
10
2000
5000
1
1000
50
10
5
100
500
2
20
200
20
50
NPN
MJF6388
PNP
MJF6668
TC = 25
°
C
VCE = 4 VOLTS
IC = 3 AMPS
3
30
300
70
7
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJH16018 | NPN SILICON POWER TRANSISTORS 1.5KV SWITCHMODE III SERIES |
| MKP3V110 | SIDACs 1 AMPERE RMS 100 thru 135 VOLTS |
| MKP3V120 | Sidac High Voltage Bidirectional Triggers |
| MKP3V120RL | Sidac High Voltage Bidirectional Triggers |
| MKP3V130 | SIDACs 1 AMPERE RMS 100 thru 135 VOLTS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJF6668G | 功能描述:達(dá)林頓晶體管 10A 100V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJH10012 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MJH11017 | 功能描述:達(dá)林頓晶體管 15A 150V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJH11017_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150−250 VOLTS, 150 WATTS |
| MJH11017G | 功能描述:達(dá)林頓晶體管 15A 150V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。