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參數(shù)資料
| 型號： | MJF6668 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | COMPLEMENTARY SILICON POWER DARLINGTONS 10 AMPERES 100 VOLTS 40 WATTS |
| 中文描述： | 10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220 |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 338K |
| 代理商： | MJF6668 |
1
Motorola Bipolar Power Transistor Device Data
For Isolated Package Applications
Designed for general–purpose amplifiers and switching applications, where the
mounting surface of the device is required to be electrically isolated from the heatsink
or chassis.
Isolated Overmold Package, TO–220 Type
Electrically Similar to the Popular 2N6388, 2N6668, TIP102 and TIP107
100 VCEO(sus)
10 A Rated Collector Current
No Isolating Washers Required
Reduced System Cost
High DC Current Gain — 1000 (Min) @ IC = 5.0 Adc
High Isolation Voltage (up to 4500 VRMS)
Case 221D is UL Recognized at 3500 VRMS: File #E69369
Collector–Emitter Voltage
UL RECOGNIZED
100
Vdc
Collector–Base Voltage
100
Vdc
Emitter–Base Voltage
5.0
Vdc
RMS Isolation Voltage (1)
(for 1 sec, R.H. < 30%, TA = 25 C)
4500
3500
V
— Peak(2)
Test No. 1 Per Figure 14
Test No. 2 Per Figure 15
15
Base Current
1.0
Adc
Derate above 25 C
40
0.31
Watts
W/ C
Total Power Dissipation @ TA = 25 C
PD
2.0
Watts
(2) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
* Measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in a location beneath the die), the device
mounted on a heatsink, thermal grease applied and a mounting torque of 6 to 8 in lbs.
10%.
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJF6388/D
COMPLEMENTARY
SILICON
POWER DARLINGTONS
10 AMPERES
100 VOLTS
40 WATTS
*Motorola Preferred Devices
REV 3
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| MJH16018 | NPN SILICON POWER TRANSISTORS 1.5KV SWITCHMODE III SERIES |
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| MKP3V120 | Sidac High Voltage Bidirectional Triggers |
| MKP3V120RL | Sidac High Voltage Bidirectional Triggers |
| MKP3V130 | SIDACs 1 AMPERE RMS 100 thru 135 VOLTS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJF6668G | 功能描述:達(dá)林頓晶體管 10A 100V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJH10012 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MJH11017 | 功能描述:達(dá)林頓晶體管 15A 150V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJH11017_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150−250 VOLTS, 150 WATTS |
| MJH11017G | 功能描述:達(dá)林頓晶體管 15A 150V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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