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參數(shù)資料
| 型號： | MJF6388 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Power Darlingtons(互補(bǔ)型功率晶體管) |
| 中文描述： | 10 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | CASE 221D-03, TO-220, FULL PACK-3 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 111K |
| 代理商： | MJF6388 |
MJF6388 (NPN), MJF6668 (PNP)
http://onsemi.com
4
t, TIME (ms)
0.01
0.01
0.05
1
2
5
10
20
50
500
100K
0.1
0.5
0.2
1
0.2
0.1
0.05
r
R
JC
(t) = r(t) R
JC
R
JC
=
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
T
C
= P
(pk)
R
JC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
SINGLE PULSE
R
Figure 5. Thermal Response
0.5
D = 0.5
0.3
0.03
0.02
0.02
100
200
3
30
0.3
300
1K
2K
5K
10K 20K
50K
3K
30K
0.2
0.1
0.05
T
C
, CASE TEMPERATURE (
°
C)
0
40
120
160
0.6
P
SECOND BREAKDOWN
DERATING
1
0.8
0.4
0.2
60
100
140
80
THERMAL
DERATING
20
Figure 6. Maximum Power Derating
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 4 is based on T
J(pk)
= l50 C; T
C
is
variable depending on conditions. Secondary breakdown
pulse limits are valid for duty cycles to 10% provided T
J(pk)
< 150 C. T
J(pk)
may be calculated from the data in Figure 5.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.
Figure 7. Typical SmallSignal Current Gain
f, FREQUENCY (kHz)
h
T
C
= 25
°
C
V
CE
= 4 Vdc
I
C
= 3 Adc
10,000
200
100
1000
500
300
10
30
20
2000
3000
5000
1
1000
50
10
5
100
500
2
20
200
50
f, FREQUENCY (kHz)
h
10,000
200
100
1000
500
10
2000
5000
1
1000
50
10
5
100
500
2
20
200
20
50
NPN
MJF6388
PNP
MJF6668
T
C
= 25
°
C
V
CE
= 4 VOLTS
I
C
= 3 AMPS
3
30
300
70
7
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJF6388_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:COMPLEMENTARY SILICON POWER DARLINGTONS 10 AMPERES 100 VOLTS, 40 WATTS |
| MJF6388_08 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Power Darlingtons |
| MJF6388G | 功能描述:達(dá)林頓晶體管 10A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJF6668 | 功能描述:達(dá)林頓晶體管 10A 100V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJF6668G | 功能描述:達(dá)林頓晶體管 10A 100V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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