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參數(shù)資料
| 型號(hào)： | MJW21196 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Power Transistors(硅功率晶體管) |
| 中文描述： | 16 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-247AD |
| 封裝： | CASE 340L-02, TO-247, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 75K |
| 代理商： | MJW21196 |
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 2
1
Publication Order Number:
MJW21195/D
MJW21195 (PNP)
MJW21196 (NPN)
Preferred Devices
Silicon Power Transistors
The MJW21195 and MJW21196 utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Features
Total Harmonic Distortion Characterized
High DC Current Gain h
FE
= 20 Min @ I
C
= 8 Adc
Excellent Gain Linearity
High SOA: 2.25 A, 80 V, 1 Second
PbFree Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
250
Vdc
CollectorBase Voltage
V
CBO
400
Vdc
EmitterBase Voltage
V
EBO
5.0
Vdc
CollectorEmitter Voltage 1.5 V
V
CEX
400
Vdc
Collector Current
Collector Current
Continuous
Peak (Note 1)
I
C
16
30
Adc
Base Current Continuous
I
B
5.0
Adc
Total Power Dissipation @ T
C
= 25
°
C
Derate Above 25
°
C
P
D
200
1.43
W
W/
°
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoCase
R
JC
0.7
°
C/W
Thermal Resistance, JunctiontoAmbient
R
JA
40
°
C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5 s, Duty Cycle
≤
10%.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device
Package
Shipping
ORDERING INFORMATION
MJW21195
MJW21195G
TO247
TO247
(PbFree)
30 Units/Rail
30 Units/Rail
16 AMPERES
COMPLEMENTARY
SILICON POWER TRANSISTORS
250 VOLTS, 200 WATTS
Preferred
devices are recommended choices for future use
and best overall value.
MJW21196
TO247
30 Units/Rail
http://onsemi.com
MJW21196G
TO247
(PbFree)
30 Units/Rail
TO247
CASE 340L
2
1
3
MARKING DIAGRAM
MJW2119x
AYWWG
x
A
Y
WW
G
= 5 or 6
= Assembly Location
= Year
= Work Week
= PbFree Package
1 BASE
2 COLLECTOR
3 EMITTER
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MK2P-I | GENERAL PURPOSE RELAY |
| MK2PD-I | GENERAL PURPOSE RELAY |
| MK2PD-S | GENERAL PURPOSE RELAY |
| MK2PND-I | GENERAL PURPOSE RELAY |
| MK2PND-S | GENERAL PURPOSE RELAY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJW21196G | 功能描述:兩極晶體管 - BJT 16A 250V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJW25 | 制造商:MINMAX 制造商全稱:Minmax Technology Co., Ltd. 功能描述:DC/DC CONVERTER 25W, Highest Power Density 1 |
| MJW25-12D15 | 制造商:MINMAX 制造商全稱:Minmax Technology Co., Ltd. 功能描述:DC/DC CONVERTER 25W, Highest Power Density 1 |
| MJW3281A | 功能描述:兩極晶體管 - BJT 15A 230V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJW3281A_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 230 VOLTS 200 WATTS |
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