參數(shù)資料
型號(hào)： MJE253
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS
中文描述： 4 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-225AA
文件頁(yè)數(shù)： 1/6頁(yè)
文件大小： 235K
代理商： MJE253
1
Motorola Bipolar Power Transistor Device Data
. . . designed for low power audio amplifier and low–current, high–speed switching
applications.
High Collector–Emitter Sustaining Voltage —
VCEO(sus) = 100 Vdc (Min) — MJE243, MJE253
High DC Current Gain @ IC = 200 mAdc
hFE = 40–200
hFE
= 40–120 — MJE243, MJE253
Low Collector–Emitter Saturation Voltage —
VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
High Current Gain Bandwidth Product —
fT = 40 MHz (Min) @ IC = 100 mAdc
ICBO = 100 nAdc (Max) @ Rated VCB
Collector Current — Continuous
Peak
4.0
8.0
Adc
Derate @ 25 C
1.5
0.012
Watts
W/ C
Operating and Storage Junction
TJ, Tstg
–65 to +150
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
θ
θ
JA
8.34
83.4
C/W
C/W
16
20
Figure 1. Power Derating
T, TEMPERATURE (
°
C)
0
40
60
100
120
160
12
P
1.6
0
1.2
8.0
0.8
4.0
0.4
80
140
T
P
T
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE243/D
4 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
100 VOLTS
15 WATTS
*Motorola Preferred Device
CASE 77–08
TO–225AA
REV 7
相關(guān)PDF資料
PDF描述
MJE243 POWER TRANSISTORS COMPLEMENTARY SILICON
MJE243 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS
MJE2955T 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTS
MJE2955T COMPLEMENTARY SILICON POWER TRANSISTORS
MJE2955T PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJE253G 功能描述:兩極晶體管 - BJT 4A 100V 15W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE253G 制造商:ON Semiconductor 功能描述:Bipolar Transistor
MJE254 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS
MJE270 功能描述:兩極晶體管 - BJT 2A 100V Bipolar RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE270G 功能描述:兩極晶體管 - BJT 2A 100V Bipolar Power NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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