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| 型號(hào)： | MJE2955T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | COMPLEMENTARY SILICON POWER TRANSISTORS |
| 中文描述： | 互補(bǔ)性的芯片功率晶體管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 129K |
| 代理商： | MJE2955T |
1
Motorola Bipolar Power Transistor Device Data
!
. . . designed for use in general–purpose amplifier and switching applications.
DC Current Gain Specified to 10 Amperes
fT = 2.0 MHz (Min) @ IC = 500 mAdc
Derate above 25 C
Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed.
10
7.0
5.0
Figure 1. Active–Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
5.0
2.0
1.0
0.7
0.2
0.1
20
30
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED
TC = 25
°
C (D = 0.1)
I
dc
7.0
10
5.0 ms
1.0 ms
50
60
0.5
3.0
0.3
TJ = 150
°
C
100
μ
s
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 1 is based on TJ(pk) = 150 C. TC is vari-
able depending on conditions. Second breakdown pulse lim-
its are valid for duty cycles to 10% provided TJ(pk)
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown. (See AN415A)
150 C.
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE2955T/D
10 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60 VOLTS
75 WATTS
*Motorola Preferred Device
CASE 221A–06
TO–220AB
REV 1
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