參數(shù)資料
型號： MJE170
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： Complementary Plastic Silicon Power Transistors(互補(bǔ)型硅功率晶體管)
中文描述： 3 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-225AA
封裝： PLASTIC, CASE 77-09, 3 PIN
文件頁數(shù)： 4/6頁
文件大小： 82K
代理商： MJE170
MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN)
http://onsemi.com
4
10
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
0.01
30
2.0
5.0
0.1
BONDING WIRE LIMITED
THERMALLY LIMITED @
T
C
= 25
°
C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED V
CEO
Figure 5. MJE171, MJE172
500 s
5.0ms
dc
1.0
20
10
50
5.0
3.0
2.0
1.0
100
100 s
T
J
= 150
°
C
I
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
0.01
Figure 6. MJE181, MJE182
I
MJE171
MJE172
0.02
0.05
0.2
0.5
30
20
10
50
5.0
3.0
2.0
1.0
100
10
2.0
5.0
0.1
1.0
0.02
0.05
0.2
0.5
70
100 s
500 s
5.0ms
dc
MJE181
MJE182
BONDING WIRE LIMITED
THERMALLY LIMITED @
T
C
= 25
°
C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED V
CEO
T
J
= 150
°
C
7.0
ACTIVEREGION SAFE OPERATING AREA
There are two limitations on the power handling ability of
a transistor average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 5 and 6 is based on T
J(pk)
= 150
°
C; T
C
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
T
J(pk)
150
°
C. T
J(pk)
may be calculated from the data in
Figure 4. At high case temperature, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
10K
I
C
, COLLECTOR CURRENT (AMPS)
Figure 7. TurnOff Time
10
5K
3K
2K
1K
500
300
200
100
50
30
20
t
0.01
0.03 0.05
0.5
0.2
0.02
0.1
0.3
10
5
2
1
3
V
CC
= 30 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25
°
C
t
s
t
f
V
R
, REVERSE VOLTAGE (VOLTS)
10
50
70
100
30
Figure 8. Capacitance
50
20
10
5.0
3.0
2.0
1.0
0.5
C
0.7
T
J
= 25
°
C
C
ib
C
ob
NPN MJE181/182
PNP MJE171/172
PNP MJE171/MJE172
NPN MJE181/MJE182
20
30
7.0
相關(guān)PDF資料
PDF描述
MJE180 Complementary Plastic Silicon Power Transistors(互補(bǔ)型硅功率晶體管)
MJE253 Complementary Silicon Power Plastic Transistors(互補(bǔ)型硅功率晶體管)
MJE350 Plastic Medium Power PNP Silicon Transistor(0.5A,300V,20W,塑料中等功率硅PNP晶體管)
MJE4353 High-Voltage High Power Transistor(16A,160V,高壓大功率硅PNP晶體管)
MJE800 Plastic Darlington Complementary Silicon Power Transistors(互補(bǔ)型達(dá)林頓硅功率晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJE170G 功能描述:兩極晶體管 - BJT 3A 40V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE170STU 功能描述:兩極晶體管 - BJT PNP Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE171 功能描述:兩極晶體管 - BJT 3A 60V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE171_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Plastic Silicon Power Transistors 40 − 60 − 80 VOLTS 12.5 WATTS
MJE171G 功能描述:兩極晶體管 - BJT 3A 60V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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