參數(shù)資料
型號(hào)： MJE800
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： Plastic Darlington Complementary Silicon Power Transistors(互補(bǔ)型達(dá)林頓硅功率晶體管)
中文描述： 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-225
封裝： PLASTIC, CASE 77-09, 3 PIN
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 84K
代理商： MJE800
Semiconductor Components Industries, LLC, 2006
February, 2006 Rev. 8
1
Publication Order Number:
MJE700/D
MJE700, MJE702, MJE703
(PNP) MJE800, MJE802,
MJE803 (NPN)
Plastic Darlington
Complementary Silicon
Power Transistors
These devices are designed for generalpurpose amplifier and
lowspeed switching applications.
Features
High DC Current Gain h
FE
= 2000 (Typ) @ I
C
= 2.0 Adc
Monolithic Construction with Builtin BaseEmitter Resistors to
Limit Leakage Multiplication
Choice of Packages MJE700 and MJE800 Series
PbFree Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
MJE702, MJE703, MJE802, MJE803
CEO
80
CollectorBase Voltage
MJE702, MJE703, MJE802, MJE803
V
CB
80
Vdc
EmitterBase Voltage
Collector Current
Base Current
Total Power Dissipation @ T
C
= 25 C
V
EB
I
C
I
B
P
D
J
stg
5.0
4.0
0.1
40
0.32
Vdc
Adc
Adc
mW/ C
Characteristic
Symbol
Max
Unit
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
4.0 AMPERE
DARLINGTON POWER
TRANSISTORS
COMPLEMENTARY SILICON
40 WATT
50 WATT
http://onsemi.com
TO225
CASE 77
STYLE 1
21
3
MARKING DIAGRAM
YWW
JEx0yG
Y
WW
JEx0y = Device Code
x = 7 or 8
y = 0, 2, or 3
G
= PbFree Package
= Year
= Work Week
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
相關(guān)PDF資料
PDF描述
MJF4343 POWER TRANSISTORS COMPLEMENTARY SILICON
MJF6388 Complementary Power Darlingtons(互補(bǔ)型功率晶體管)
MJL0281A Complementary NPN(互補(bǔ)型NPN)
MJL0302A Complementary NPN(互補(bǔ)型NPN)
MJW21196 Silicon Power Transistors(硅功率晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJE800G 功能描述:達(dá)林頓晶體管 4A 60V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MJE800STU 功能描述:達(dá)林頓晶體管 NPN Si Transistor Epitaxial Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MJE800T 制造商:MOSPEC 制造商全稱:Mospec Semiconductor 功能描述:POWER TRANSISTORS(4.0A,60-80V,40W)
MJE801 功能描述:達(dá)林頓晶體管 RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MJE801STU 功能描述:達(dá)林頓晶體管 NPN Si Transistor Epitaxial Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
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