參數(shù)資料
型號(hào)： MJE180
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： Complementary Plastic Silicon Power Transistors(互補(bǔ)型硅功率晶體管)
中文描述： 3 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-225AA
封裝： PLASTIC, CASE 77-09, 3 PIN
文件頁數(shù)： 1/6頁
文件大?。?/td> 82K
代理商： MJE180
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 9
1
Publication Order Number:
MJE171/D
MJE170, MJE171, MJE172
(PNP), MJE180, MJE181,
MJE182 (NPN)
Preferred Device
Complementary Plastic
Silicon Power Transistors
The MJE170/180 series is designed for low power audio amplifier
and low current, high speed switching applications.
Features
CollectorEmitter Sustaining Voltage
V
CEO(sus)
= 40 Vdc MJE170, MJE180
= 60 Vdc MJE171, MJE181
= 80 Vdc MJE172, MJE182
DC Current Gain
h
FE
= 30 (Min) @ I
C
= 0.5 Adc
= 12 (Min) @ I
C
= 1.5 Adc
CurrentGain Bandwidth Product
f
T
= 50 MHz (Min) @ I
C
= 100 mAdc
Annular Construction for Low Leakages
I
CBO
= 100 nA (Max) @ Rated V
CB
Epoxy Meets UL 94 V0 @ 0.125 in
ESD Ratings: Machine Model, C
Human Body Model, 3B
PbFree Packages are Available*
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal
operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may be
affected.
CollectorBase Voltage
V
CB
Vdc
MJE171, MJE181
MJE171, MJE181
CEO
60
Collector Current
Continuous
Derate above 25 C
B
0.012
W/ C
Temperature Range
Total Power Dissipation @ T
A
= 25 C
P
D
12.5
W
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO225AA
CASE 7709
STYLE 1
3 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
40 60 80 VOLTS
12.5 WATTS
321
Preferred
devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
MARKING DIAGRAM
YWW
JE1xxG
Y
WW
JE1xx
= Year
= Work Week
= Specific Device Code
x = 70, 71, 72, 80, 81, or 82
= PbFree Package
G
相關(guān)PDF資料
PDF描述
MJE253 Complementary Silicon Power Plastic Transistors(互補(bǔ)型硅功率晶體管)
MJE350 Plastic Medium Power PNP Silicon Transistor(0.5A,300V,20W,塑料中等功率硅PNP晶體管)
MJE4353 High-Voltage High Power Transistor(16A,160V,高壓大功率硅PNP晶體管)
MJE800 Plastic Darlington Complementary Silicon Power Transistors(互補(bǔ)型達(dá)林頓硅功率晶體管)
MJF4343 POWER TRANSISTORS COMPLEMENTARY SILICON
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJE18002 功能描述:兩極晶體管 - BJT 2A 450V 40W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE18002D2 制造商:Rochester Electronics LLC 功能描述:- Bulk
MJE18002G 功能描述:兩極晶體管 - BJT 2A 450V 40W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE18004 功能描述:兩極晶體管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE18004D2 功能描述:兩極晶體管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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