參數(shù)資料
型號: MJE16002
廠商: MOSPEC SEMICONDUCTOR CORP.
英文描述: POWER TRANSISTORS(5A,450V,80W)
中文描述: 功率晶體管(第5A,450V,80瓦)
文件頁數(shù): 4/10頁
文件大?。?/td> 425K
代理商: MJE16002
4
Motorola Bipolar Power Transistor Device Data
Figure 5. Collector Cutoff Region
104
VBE, BASE–EMITTER VOLTAGE (VOLTS)
10–1
0
–0.4
Figure 6. Capacitance
10000
VR, REVERSE VOLTAGE (VOLTS)
C
Cib
0.1
,
I
μ
103
102
101
100
–0.2
+0.2
+0.4
+0.6
TJ = 150
°
C
125
°
C
100
°
C
75
°
C
REVERSE
FORWARD
25
°
C
VCE = 250 Vdc
100
850
TJ = 25
°
C
1000
10
100
10
1.0
Cob
TYPICAL STATIC CHARACTERISTICS (continued)
,
t
,
t
IC, COLLECTOR CURRENT (AMPS)
10000
5000
2000
100
200
1000
500
0.7
1.0
2.0
0.5
5.0
Figure 7. Storage Time
Figure 8. Storage Time
IC, COLLECTOR CURRENT (AMPS)
t
1000
500
200
10
20
100
50
0.7
1.0
0.5
5.0
IC, COLLECTOR CURRENT (AMPS)
t
1000
500
200
10
20
100
50
0.7
1.0
0.5
5.0
Figure 9. Collector Current Fall Time
Figure 10. Collector Current Fall Time
IC, COLLECTOR CURRENT (AMPS)
10000
5000
2000
100
200
1000
500
0.7
1.0
3.0
0.5
5.0
β
f = 5
TJ = 75
°
C
VCC = 20 V
VBE(off) = 0 V
–2.0 V
0 V
VBE(off) = 0 V
2.0
3.0
2.0
3.0
2.0
3.0
VBE(off) = 2.0 V
VBE(off) = 0 V
VBE(off) = 5.0 V
β
f = 10
TJ = 75
°
C
VCC = 20 V
VBE(off) = 2.0 V
VBE(off) = 5.0 V
VBE(off) = 2.0 V
VBE(off) = –5.0 V
β
f = 5
TJ = 75
°
C
VCC = 20 V
–5.0 V
–2.0 V
0 V
VBE(off) = 0 V
VBE(off) = 2.0 V
β
f = 10
TJ = 75
°
C
VCC = 20 V
–5.0 V
VBE(off) = 5.0 V
TYPICAL DYNAMIC CHARACTERISTICS
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