參數(shù)資料
型號: MJE1320
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: POWER TRANSISTOR
中文描述: 2 A, 900 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: CASE 221A-09, 3 PIN
文件頁數(shù): 2/8頁
文件大?。?/td> 281K
代理商: MJE1320
2
Motorola Bipolar Power Transistor Device Data
OFF CHARACTERISTICS
(VCEV = Rated Value, VBE(off) = 1.5 Vdc)
0.25
IC = 1 Adc
Collector–Emitter Saturation Voltage
(IC = 2 Adc, IB = 1 Adc)
(IC = 1 Adc, IB = 0.5 Adc, TC = 100 C)
Base–Emitter Saturation Voltage
(IC = 2 Adc, IB = 1 Adc)
VCE(sat)
2.5
3
4.5
7
Vdc
VBE(sat)
0.3
0.3
2.5
1.5
Vdc
DYNAMIC CHARACTERISTICS
0.9
2.8
VCC = 250 Vdc, IC = 1 A
TC = 25 C
IC = 1 A, Vclamp = 400 Vdc,
相關(guān)PDF資料
PDF描述
MJE16002 5.0 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 80 WATTS
MJE16002 NPN SILICON POWER TRANSISTORS
MJE16002 POWER TRANSISTORS(5A,450V,80W)
MJE253 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS
MJE243 POWER TRANSISTORS COMPLEMENTARY SILICON
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJE15028 功能描述:兩極晶體管 - BJT 8A 120V 50W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE15028_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120−150 VOLTS, 50 WATTS
MJE15028G 功能描述:兩極晶體管 - BJT 8A 120V 50W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE15029 功能描述:兩極晶體管 - BJT 8A 120V 50W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE15029 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR PNP -120V TO-220 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR, PNP, -120V, TO-220