參數(shù)資料
型號: MJE13003B
廠商: MICRO COMMERCIAL COMPONENTS
元件分類: 小信號晶體管
英文描述: 1 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 1/2頁
文件大?。?/td> 1157K
代理商: MJE13003B
MJE13003B
NPN Silicon
Plastic-Encapsulate
Transistor
Features
Capable of 1.
0Watts of Power Dissipation.
Collector-current 1.5A
Collector-base Voltage 700V
Operating and storage junction temperature range: -55
OC to +150OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=10mAdc, IB=0)
400
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=1000uAdc, IE=0)
700
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=1000uAdc, IC=0)
9.0
Vdc
ICBO
Collector Cutoff Current
(VCB=700Vdc, IE=0)
1000
uAdc
ICEO
Collector Cutoff Current
(VCE=400Vdc,IB=0)
500
uAdc
IEBO
Emitter Cutoff Current
(VEB=7.0Vdc, IC=0)
100
uAdc
ON CHARACTERISTICS
hFE
DC Current Gain
(IC=0.
4Adc, V
CE=
10Vdc)
20
40
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=1500mAdc, IB=500mAdc)
3.0
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=500mAdc, IB=100mAdc)
1.0
Vdc
omponents
20736 Marilla Street Chatsworth
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MCC
Revision: 2
2006/05/19
TM
Micro Commercial Components
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=500mAdc, IB=100mAdc)
0.8
Vdc
A
E
B
C
D
G
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.170
.190
4.33
4.83
B
.170
.190
4.30
4.83
C
.550
.590
13.97
14.97
D
.010
.020
0.36
0.56
E
.130
.160
3.30
3.96
G
.010
.104
2.44
2.64
TO-92
E
C
B
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
www.mccsemi.com
1 of 2
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