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參數(shù)資料
| 型號： | MJE13003Y |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1.5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | TO-126, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 53K |
| 代理商： | MJE13003Y |
2009. 8. 19
1/2
SEMICONDUCTOR
TECHNICAL DATA
MJE13003
TRIPLE DIFFUSED NPN TRANSISTOR
Revision No : 10
SWITCHING REGULATOR APPLICATION.
HIGH VOLTAGE AND HIGH SPEED
SWITCHING APPLICATION.
FEATURES
Excellent Switching Times
: ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=1A
High Collector Voltage : VCBO=700V.
MAXIMUM RATING (Ta=25
)
TO-126
H
J
MILLIMETERS
C
E
F
G
D
A
B
DIM
A
C
E
F
G
H
J
K
M
O
P
N
L
D
1. EMITTER
2. COLLECTOR
3. BASE
K
L
M
N
O
P
8.3 MAX
5.8
0.7
Φ3.2 0.1
3.5
11.0 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75 0.15
2.3 0.1
0.65 0.15
1.6
3.4 MAX
B
1
23
+_
15.50 0.5
+_
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Emitter Cut-off Current
IEBO
VEB=9V, IC=0
-
10
A
Collector Cut-off Current
ICBO
VCB=700V, IE=0
-
10
A
DC Current Gain
hFE(1) (Note)
VCE=2V, IC=0.5A
9
-
38
hFE(2)
VCE=2V, IC=1A
5
-
Collector-Emitter
Saturation Voltage
VCE(sat)
IC=0.5A, IB=0.1A
-
0.5
V
IC=1A, IB=0.25A
-
1
IC=1.5A, IB=0.5A
-
3
Base-Emitter
Saturation Voltage
VBE(sat)
IC=0.5A, IB=0.1A
-
1
V
IC=1A, IB=0.25A
-
1.2
Collector Output Capacitance
Cob
VCB=10V, f=0.1MHz, IE=0
-
21
-
pF
Transition Frequency
fT
VCE=10V, IC=0.1A
4
-
MHz
Turn-On Time
ton
IB1
125
B1
I
CC
V
=125V
IB2
300
S
I =I
=0.2A
2%
B1 B2
OUTPUT
DUTY CYCLE
INPUT
<=
-
1.1
S
Storage Time
tstg
-
4.0
S
Fall Time
tf
-
0.7
S
Note : hFE Classification R:9 15, O:13 21, Y:20~38
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
700
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
9
V
Collector Current
DC
IC
1.5
A
Pulse
ICP
3
Base Current
IB
0.75
A
Collector Power
Dissipation
Ta=25
PC
1.5
W
Tc=25
20
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55
150
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