參數(shù)資料
型號: MJE13005-DR6269
廠商: HARRIS SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
文件頁數(shù): 1/3頁
文件大小: 75K
代理商: MJE13005-DR6269
相關PDF資料
PDF描述
MJE13004-6200 4 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE13004-6226 4 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE13004-6255 4 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE13004-6265 4 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE13005-DR6259 4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
相關代理商/技術參數(shù)
參數(shù)描述
MJE13005F 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED NPN TRANSISTOR (SWITCHING REGULATOR, HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER, FLUORESCENT LIGHT BALLSTOR)
MJE13005F_05 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TO-220IS PACKAGE
MJE13005F_08 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED NPN TRANSISTOR
MJE13005G 功能描述:兩極晶體管 - BJT 4A 400V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE13005G-X-T60-K 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN SILICON POWER TRANSISTORS