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參數(shù)資料
| 型號(hào)： | MJE13003 |
| 廠商： | 永盛國(guó)際集團(tuán) |
| 英文描述： | GT 35C 35#16 SKT RECP BOX |
| 中文描述： | NPN硅晶體管 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 304K |
| 代理商： | MJE13003 |
6
Motorola Bipolar Power Transistor Device Data
The Safe Operating Area figures shown in Figures 11 and 12 are
specified ratings for these devices under the test conditions
shown.
I
I
1.6
0
800
0.4
100
VCEV, COLLECTOR–EMITTER CLAMP VOLTAGE (VOLTS)
300
TJ
≤
100
°
C
IB1 = 1 A
500
700
VBE(off) = 9 V
0
0.8
1.2
100
μ
s
10
μ
s
1.0 ms
dc
5
5
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.01
10
500
1
0.5
2
0.2
0.05
0.02
20
50
100
200
Figure 11. Active Region Safe Operating Area
TC = 25
°
C
Figure 12. Reverse Bias Safe Operating Area
0.1
300
200
400
600
5 V
1.5 V
5.0 ms
10
MJE13002
MJE13003
MJE13002
MJE13003
3 V
THERMAL LIMIT (SINGLE PULSE)
BONDING WIRE LIMIT
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW RATED VCEO
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 11 is based on TC = 25 C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC
≥
25 C. Second breakdown limitations do not der-
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 11 may be found at any case tem-
perature by using the appropriate curve on Figure 13.
TJ(pk) may be calculated from the data in Figure 10. At
high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage–current conditions during re-
verse biased turn–off. This rating is verified under clamped
conditions so that the device is never subjected to an ava-
lanche mode. Figure 12 gives RBSOA characteristics.
TC, CASE TEMPERATURE (
°
C)
0
40
120
160
0.6
P
SECOND BREAKDOWN
DERATING
1
0.8
0.4
0.2
60
100
140
80
THERMAL
DERATING
20
Figure 13. Forward Bias Power Derating
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PDF描述 |
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