參數(shù)資料
型號: MJE13003
廠商: 永盛國際集團(tuán)
英文描述: GT 35C 35#16 SKT RECP BOX
中文描述: NPN硅晶體管
文件頁數(shù): 1/8頁
文件大?。?/td> 304K
代理商: MJE13003
1
Motorola Bipolar Power Transistor Device Data
!
These devices are designed for high–voltage, high–speed power switching
inductive circuits where fall time is critical. They are particularly suited for 115 and
220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor
Controls, Solenoid/Relay drivers and Deflection circuits.
SPECIFICATION FEATURES:
Reverse Biased SOA with Inductive Loads @ TC = 100 C
Inductive Switching Matrix 0.5 to 1.5 Amp, 25 and 100 C
. . . tc @ 1 A, 100 C is 290 ns (Typ).
700 V Blocking Capability
SOA and Switching Applications Information.
— Peak (1)
IBM
1.5
Emitter Current — Continuous
IE
2.25
Adc
Derate above 25 C
320
mW/ C
Operating and Storage Junction Temperature Range
TJ, Tstg
–65 to +150
C
1/8
from Case for 5 Seconds
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE13002/D
1.5 AMPERE
NPN SILICON
POWER TRANSISTORS
300 AND 400 VOLTS
40 WATTS
*Motorola Preferred Device
REV 4
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