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參數(shù)資料
| 型號(hào)： | MJE13003 |
| 廠商： | 永盛國(guó)際集團(tuán) |
| 英文描述： | GT 35C 35#16 SKT RECP BOX |
| 中文描述： | NPN硅晶體管 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 304K |
| 代理商： | MJE13003 |
3
Motorola Bipolar Power Transistor Device Data
C
V
0.02
IC, COLLECTOR CURRENT (AMP)
0.35
0.3
0.2
1.4
IC, COLLECTOR CURRENT (AMP)
1.2
1
0.8
0.6
0.02
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
4
0.05
0.1
0.7
2
10
8
Figure 2. Collector Saturation Region
0.01
IB, BASE CURRENT (AMP)
0.02
0.05
1.2
0.4
0
80
h
VCE = 2 V
VCE = 5 V
0.1
0.2
0.5
1
Figure 3. Base–Emitter Voltage
Figure 4. Collector–Emitter Saturation Region
Figure 5. Collector Cutoff Region
2
0.8
104
VBE, BASE–EMITTER VOLTAGE (VOLTS)
10–1
0
TJ = 25
°
C
TJ = 150
°
C
20
0.07
0.3
–0.4
Figure 6. Capacitance
500
VR, REVERSE VOLTAGE (VOLTS)
Cib
0.1
,
I
μ
0.05
103
102
101
100
–0.2
+0.2
+0.4
+0.6
REVERSE
FORWARD
VCE = 250 V
70
50
10
7
2
20
500 1000
1.6
0.005
0.002
0.4
0
0.1
25
°
C
–55
°
C
0.3 A
IC = 0.1 A
TJ = –55
°
C
6
0.03
0.2
0.5
1
2
0.03
0.1
0.7
0.07
2
0.02
0.05
0.3
0.2
0.5
1
0.15
0.25
60
40
30
1 A
VBE(sat) @ IC/IB = 3
VBE(on) @ VCE = 2 V
300
200
100
5
20
30
200
100
50
10
5
1
0.5
0.2
150
°
C
0.03
0.1
0.7
0.07
2
0.05
0.3
0.2
0.5
1
V
V
IC/IB = 3
0.5 A
1.5 A
25
°
C
25
°
C
Cob
TJ = –55
°
C
25
°
C
150
°
C
TJ = 150
°
C
125
°
C
100
°
C
75
°
C
50
°
C
25
°
C
TJ = 25
°
C
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|---|---|
| MJE13003 | GT 37C 37#16 SKT RECP |
| MJE13003 | POWER TRANSISTORS(1.5A,300-400V,40W) |
| MJE13005 | GT 5C 2#4 3#12 PIN RECP |
| MJE13005 | NPN SILICON TRANSISTOR(ELECTRONIC TRANSFORMERS , POWER SWICHING CIRCUIT) |
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| MJE13003_06 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TO-126 PACKAGE |
| MJE13003_09 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED NPN TRANSISTOR |
| MJE13003_12 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN SILICON POWER TRANSISTOR |
| MJE13003A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MJE SERIES TRANSISTORS |
| MJE13003B | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:High Voltage Fast-switching NPN Power Transistor |
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